[PD-6-1] Electron States in Crescent GaAs Coupled Quantum-Wires

Kazuhiro KOMORI, Hideki IMANISHI, Xue-Lun WANG, Mutsuo OGURA, Hirofumi MATSUHATA (1.Electrotechnical Laboratory (ETL), AIST, MITI, 2.Nippon Sheet Glass Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-2] Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001)InP Substrates by Selective Molecular Beam Epitaxy

Moriaki ARAKI, Yuuki HANADA, Hajime FUJIKURA, Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-3] Tunneling Spectroscopy of InAs Wetting Layers and Coherent Islands: Resonant Tunneling through Two- and Zero-Dimensional Electronic States

T. Suzuki, K. Nomoto, K. Taira, I. Hase (1.Sony Corporation Research Center)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-4] Single-Dot Optical Spectroscopy of Self-Organized Strained InGaAs Quantum Disks on (311)B-GaAs Substrate

H. Kamada, J. Temmyo, M. Notomi, T. Furuta, T. Tamamura (1.NTT Opto-electronics Laboratories, 2.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-5] Spontaneous Formation of Nanostructures in InxGa1-xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates

Pablo O. VACCARO, Kazuhisa FUJITA, Toshihide WATANABE (1.ATR Optical and Radio Communications Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-6] Investigation of the Influence of In0.59Ga0.41As Relaxed Layer InAs/In0.59Ga0.41As/GaAs Double Quantum Well Resonant Interband Tunneling Structure

Chih Chin YANG, Kuang Chih HUANG, Yan Kuin SU (1.Department of Electrical Engineering, National Sun Yat-sen University, 2.Department of Electrical Engineering, National Kaohsiung Institute of Technology, 3.Department of Electrical Engineering, National Cheng Kung University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-7] Excitation Power Dependent Photoluminescence Characterization and Successful Edge Passivation of Etched InGaAs Quantum Wires Formed by Electron Beam Lithography

Masahiro KUBO, Hajime FUJIKURA, Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-8] A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE: Investigation of Transport Properties

Masashi AKABORI, Junichi MOTOHISA, Tomoki IRISAWA, Shinjiroh HARA, Jun-ya ISHIZAKI, Kazunobu OHKURI, Takashi FUKUI (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-9] Photoluminescence from Deuterium Terminated Porous Silicon

Takahiro Matsumoto, Yasuaki Masumoto, Shinichi Nakashima, Hidenori Mimura, Nobuyoshi Koshida (1.Single Quantum Dot Project, ERATO, Research Development Corporation of Japan, 2.Department of Applied Physics, Osaka University, 3.Research Institute of Electrical Communication, Tohoku University, 4.Tokyo University of Agriculture and Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-6-10] Observation of Negative Differential Resistance Phenomena in Porous Silicon Superlattice Structures

Jia-Chuan Lin, Shui-Jinn Wang, Hao-Yi Tsai (1.Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University)

1996 International Conference on Solid State Devices and Materials |PDF Download