[D-7-1] FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure

Naoyuki SHINMURA, Takuji TANIGAMI, Kenji HAKOZAKI, Yukiharu AKIYAMA, Shinichi SATO, Katsuji IGUCHI, Keizo SAKIYAMA (1.VLSI Development Laboratories, IC Tenri Group, SHARP Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] High Performance Shallow Trench Isolation for High Density Flash Memory Cells

S. Deleonibus, M. Heitzmann, Y. Gobil, F. Martin, O. Demolliens, B. Guillaumot, P. Candelier, J. C. Guibert (1.LETI(CEA);SGS-THOMSON Departement de Microelectronique)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal Structure

Jong Tae Baek, Hyung Joun Yoo, Sung Hoon Chung, Sang Won Kang, Byung Tae Ahn (1.Semiconductor Technology Division, Electronics and Telecommunications Research Institute, 2.Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Taking Advantage of Semiconductor Device Physics to Implement Real-Time Perception Systems

X. Arreguit, E. Vittoz (1.CSEM)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures

Eisuke Tokumitsu, Ryo-ichi Nakamura, Hiroshi Ishiwara (1.Precision & Intelligence Lab. Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] A Novel Optical Adaptive Neuro-Device Using a Split-Gate MOS Transistor

Jang-Kyoo SHIN, Eiji IO, Kiyotaka TSUJI, Hiroo YONEZU, Naoki OHSHIMA (1.Department of Electrical & Electronic Engineering, Toyohashi University of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] Study of 4.5 kV MOS-Power Device with Injection Enhanced Trench Gate Structure

Mitsuhiko Kitagawa, Akio Nakagawa (1.Toshiba Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[LPC-1] High Energy B Implantation for Fe Gettering; Evaluation of 7.5 nm Thick Gate Oxide Reliability

K. Hamada, D. J. Eaglesham, T. Hayashi, J. M. Poate, S. Saito (1.ULSI Device Dev. Labs., NEC Corp., 2.Lucent Technologies)

1996 International Conference on Solid State Devices and Materials |PDF Download

[LPC-2] Chemical-Vapor-Deposition of Hydrogen-Free Silicon-Dioxide Films

Y. Uchida, S. Takei, M. Matsumura (1.Department of Electronics and Information Science, Teikyo Univ. of Sci. and Tech., 2.Department of Physical Electronics, Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[LPD-1] Single-Beam and Single-Mode Emission from Surface-Emitting Laser Diodes Based on Surface Mode Emission

A. Kock, N. Finger, C. Gmachl, A. Golshani, R. Hainberger, E. Gornik L. Korte (1.Institut fur Festkorperelektronik, 2.Siemens, AG)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (281 - 290)

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