[PC-4-6] Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's

Hyunsang Hwang, Dong-Hoon Lee, Jeong Mo Hwang (1.ULSI Laboratory, LG Semicon Co.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-1] Sb Multiple Ion Implanted Channel for Low Vth, Deep Submicron SOI-pMOSFETs

Akira Satoh, Kunihiro Suzuki, Toshihiro Sugii (1.FUJITSU LABORATORIES LTD.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-2] Reduction of Charge Build-up during Reactive Ion Etching by Using SOI Structures

Kiyoshi ARITA, Masashi AKAMATSU, Tanemasa ASANO (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-3] Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching

Atsushi Ogura (1.Microelectronics Research Laboratories, NEC Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-4] Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1 μm Channel Length

S. Pidin, M. Koyanagi (1.Department of Machine Intelligence and System Engineering, Faculty of Engineering, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-5] A 100±15nm Thick 8-inch Bonded SOI Fabricated with a Selective Polishing Method

M. Hashimoto, Y. Ohkubo, M. Shimanoe, M. Nakamura, H. Sato, H. Komatsu, Y. Miyazawa (1.ULSI R&D Laboratories, Semiconductor Company, Sony Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-6] Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX: Influence of Superficial Si Layer Thickness and It's Future Prospect

Toshihiko Ishiyama, Yasuhisa Omura (1.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-7] Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs

Shigeo SATOH, Yoshiharu TOSAKA, Kunihiro SUZUKI, Toru ITAKURA (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-8] Relation between Kink Effect and Impact Ionization Effect in SOI MOSFETs with Body Terminal

T. Matsumoto, Y. Kudoh, N. Terao, J. Kim, M. Koyanagi (1.Dept. of Machine Intelligence and System Engineering, Intelligent System Design Laboratory, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-5-9] Analysis on the Threshold Voltage Fixing and the Floating-Body-Effect Suppression for 0.1 μm Fully Depleted SOI-MOSFET

Risho Koh, Hiroshi Matsumoto (1.Microelectronics Research Labs., NEC Corp.)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (101 - 110)

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