[E-9-5L] Improved electron emission properties of screen-printed carbon nanotube film by hydrogen plasma surface treatment

Tao Feng, Jihua Zhang, Xi Wang, Xianghuai Liu, Shichang Zou, Qiong Li, Jingfang Xu (1.Ion Beam Laboratory, Shanghai Institute of Mircosystem and Information Technology, Chinese Academy of Sciences, 2.Department of Electronics Science and Technology, East China Normal University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-10-1] Quantum Oscillations in Two Coupled Charge Qubits

Yuri Pashkin, Tsuyoshi Yamamoto, Oleg Astafiev, Yasunobu Nakamura, Dmitri Averin, Jaw-Shen Tsai (1.The Institute of Physical and Chemical Research (RIKEN), 2.NEC Corporation, Fundamental Research Laboratories, 3.Department of Physics and Astronomy, State University of New York at Stony Brook)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-10-2] Measurement of Two-Qubit States detected by Quantum Point Contacts

Tetsufumi Tanamoto, Xuedong Hu (1.Corporate R&D Center, Toshiba Corporation, 2.Department of Physics, University at Buffalo, SUNY)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-10-3] Coherent control in inhomogeneously broadened quantum dots ensemble and its coherent transient phenomena

Noriaki Tsurumachi, Kazuhiro Komori, Toshiaki Hattori (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST-Japan Science and Technology Corporation (JST), 3.Institute of Applied Physics, University of Tsukuba)

2003 International Conference on Solid State Devices and Materials |PDF Download

[E-10-4] Observation of the spin-related even-odd effect in single-wall carbon nanotube quantum dots

Hideyuki Maki, Masaki Suzuki, Yoichi Ishiwata, Koji Ishibashi (1.Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN))

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] Ultrahigh Performance InP HEMTs

Akira Endoh, Yoshimi Yamashita, Keisuke Shinohara, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] High ft 30nm In0.7GaAs HEMT fabricated with SiO2/SiNx sidewall gate Process and BCB Planarization

Dae-Hyum Kim, Seong-Jin Yeon, Saeng-Sub Song, Kwang-Seok Seo (1.School of Electrical and Computer Engineering, Seoul National University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs

Myounghoon Yoon, Taeho Kim, Daehee Kim, Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST))

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-4] High fmax 0.1μm Γ-gate InGaAs/InAlAs/GaAs Metamorphic HEMT

Bok Hyung Lee, Byeong Ok Lim, Mi Ra Kim, Sam Dong Kim, Jin Koo Rhee, Hyung Sup Yoon (1.Millimeter-wave INnovation Technology research center(MINT), Dongguk University, 2.Wireless Communication Devices Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-5] Reduction of Turn-on Voltage in GaInNAs and InGaAs Base Double Heterojunction Bipolar Transistors

Cheng-Hsien Wu, Yan-Kuin Su, Shang-Chin Wei, Shoou-Jinn Chang (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

463 results (221 - 230)

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