[C-1-4] Ultra-thin (EOT ＜ 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications

Masahiro Koike, Tsunehiro Ino, Masato Koyama, Yoshiki Kamata, Yuuichi Kamimuta, Masamichi Suzuki, Akira Takashima, Yuichiro Mitani, Akira Nishiyama, Yoshitaka Tsunashima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Hafnium Content Dependence of Bottom Interfacial Layer and Its Impact on HfxAl1-xOy High-k nMOSCAPs and nMOSFETs Characteristics

Yasuyuki Tamura, Yoshihiro Sugiyama, Masaomi Yamaguchi, Hiroshi Minakata, Yoshiaki Tanida, Tsunehisa Sakoda, Makoto Nakamura, Yasuo Nara (1.Fujitsu Laboratories Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si/HfSiO/SiO2/Si

A. Kaneko, S. Inumiya, K. Sekine, M. Sato, Y. Kamimuta, K. Eguchi, Y. Tsunashima (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 2.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Controlled Nitrogen Incorporation into HfAlOx by Layer-by-Layer Deposition and Annealing (LL-D&A) Process and Its Impact on Electrical Properties of MOSCAPs and nMOSFETs

K. Tominaga, K. Iwamoto, H. Hisamatsu, T. Yasuda, H. Ota, N. Yasuda, T. Nabatame, A. Toriumi (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.Department of Materials Science, the University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] Suppression of Silicidation in Poly-Si/ZrO2/SiO2/Si Structure by Helium Through Process

Kouichi Muraoka (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient

Hokyung Park, Hyundoek Yang, Hyunjun Sim, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)

Daisuke Matsushita, Yukie Nishikawa, Nobutaka Satou, Masahiko Yoshiki, Tatsuo Schimizu, Takeshi Yamaguchi, Hideki Satake, Noburu Fukushima (1.Advanced LSI Technology Laboratory, Toshiba Corporation and, 2.Toshiba Nanoanalysis Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] 0.18 μm Embedded FRAM Fabrication Process and its Consistency with Conventional Logic LSI Process

Yoshimasa Horii, Takashi Eshita (1.FRAM Division, Fujitsu Limited)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita, Yukio Nishida, Kiyoshi Hayashi, Takahisa Eimori, Masahide Inuishi, Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Silicon Selective Epitaxial Growth for Self-Aligned Cell Contact Featuring High Performance Sub-100nm DRAM Cell Transistors

T. J. Kim, Y. P. Kim, B. C. Lee, S. Choi, U. I. Chung, J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download