The Japan Society of Applied Physics

463 results (91 - 100)

[C-1-4] Ultra-thin (EOT < 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications

Masahiro Koike, Tsunehiro Ino, Masato Koyama, Yoshiki Kamata, Yuuichi Kamimuta, Masamichi Suzuki, Akira Takashima, Yuichiro Mitani, Akira Nishiyama, Yoshitaka Tsunashima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

463 results (91 - 100)