[B-2-2] High performance PZT capacitor using highly crystalline SRO bottom electrode for Mbit FeRAM devices

Hiroshi Itokawa, Katsuaki Natori, Soichi Yamazaki, Gerhard Beitel, Koji Yamakawa (1.Semiconductor Company, Toshiba Corp., 2.Infineon Technologies Japan)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] A novel chemical solution deposition method suitable for high-yield fabrication of 50 nm-thick SrBi2Ta2O9 capacitors

Yoshihito Kawashima, Hiroshi Ishiwara (1.Frontier Collaborative Research Center, Tokyo Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] Two-Mode Behavior in Time and Temperature Dependence of Imprint-Induced Charge Loss in Integrated SrBi2(Ta,Nb)2O9 Capacitors

Atsushi Noma, Takumi Mikawa, Yoshihisa Nagano, Yuji Judai, Eiji Fujii (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Floating gate type nonvolatile memory reliability issues

Georg Tempel (1.Infineon Technologies)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] The Prospect of New Emerging Memories (invited paper)

Hongsik Jeong, Kinam Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Proposal of New Non-Volatile Memory with Magnetic Nano-Dots

Takeshi Sakaguchi, Motoki Kobayashi, Masaaki Takata, Hoon Choi, Youn-Gi Hong, Jeoung-Chill Shim, Hiroyuki Kurino, Mitsumasa Koyanagi (1.Department of Bioengineering and Robotics, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] A 0.18-μm Embedded MNOS-Type Non-volatile Memory for High-Frequency and Low-Voltage Operation

N. Matsuzaki, T. Ishimaru, Y. Okuyama, T. Mine, H. Kume, T. Hashimoto, Y. Kanamaru, T. Sakai, Y. Kawashima, F. Ito, M. Mizuno, K. Okuyama, Y. Shinagawa, K. Kuroda, S. Meguro, T. Toya (1.Hitachi Central Research Laboratory, Hitachi, Ltd., 2.Renesas Technology Corp.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] 70 nm SONOS Nonvolatile Memory Devices using FN Programming and Hot Hole Erase Method

Soo Doo Chae, Chang Ju Lee, Ju Hyung Kim, Suk Kang Sung, Jae Seong Sim, Moon Kyung Kim, Se Wook Yoon, Youn Seok Jeong, Won Il Ryu, Tae Hun Kim, Byung-Gook Park, Jo Won Lee, Chung Woo Kim (1.Material and Device Lab., Samsung Advanced Institute of Technology, 2.Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Excellent Electrical Characteristics of SONOS-type Flash Memory with High-κ Dielectric as Trapping and Blocking Layer

Myungjun Cho, Sangmoo Choi, Jung Woo Kim, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 2.MD laboratory, Samsung Advanced Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Data retention improvement of MONOS memories by using silicon-tetrachloride based silicon nitride with ultra-low Si-H bond density

K. Nomoto, G. Asayama, T. Kobayashi (1.Sony Microsystems Network Company, Atsugi Tec., 2.Present address:Sony Fusion Domain Laboratory, Heneda Tec.)

2003 International Conference on Solid State Devices and Materials |PDF Download