[A-2-6] Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park, H.D. Lee, J.S. Kim, S.H Baek, H. Chang, J.H. Lee, K.C. Kim, B.S. Song, H.K. Bae, M.O. Kim, H.S. Lee, Y.S. Kang, D.B. Kim (1.System IC R&D Division, Hynix Semiconductor Inc., 2.Dept. of Electronics Engineering, Chungnam National University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Integration Issues of HfO2-Al2O3 Laminate for Gate and Capacitor Dielectric

Jong-Ho Lee (1.Advanced Process Development Team, System LSI Division, Samsung Electronics Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Influence of Carrier Velocity Related Parameters on the Propagation Delay Time of CMIS Inverters with High-k Gate Dielectrics

Mizuki Ono, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji, A. Mutoh, K. Torii, R. Mitsuhashi, A. Horiuchi, T. Maeda, H. Itoh, T. Kawahara, K. Hayashi, T. Sasaki, N. Kasai, H. Kitajima, M. Yasuhira, T. Arikado (1.Semiconductor Leading Edge Technologies, Inc.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] A Novel Approach for Determination of Tunneling Mass, meff - Conduction Band Offset Energy, EB, Products for Advanced Gate Dielectrics

C.L. Hinkle, C. Fulton, R.J. Nemanich, G. Lucovsky (1.North Carolina State University, Department of Physics)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] 1300nm-range GaInNAsSb VCSELs

A. Kasukawa, H. Shimizu, C. Setiagung, M. Ariga, Y. Ikenaga, K. Kumada, T. Hama, N. Iwai (1.The Furukawa Electric Co., Ltd., Yokohama R&D Laboratories)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Hsin-Chieh Yu, Shoou-Jinn Chang, Yan-Kuin Su, Chia-Pin Sung, Hong-Pin Yang, Chun-Yuan Huang, Yu-Wei Lin, Jin-Mei Wang, Fang-I Lai, Hao-Chung Kuo (1.Institute of Microelectronics, National Cheng Kung University, 2.Opto-Electronics&System Laboratory, Industrial Technology Research Institute, 3.Institute of Electronics Engineering, National Tsing Hua University, 4.Institute of Eletro-Optical Engineering, National Chiao Tung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama, Daijiro Inoue, Shingo Kameyama, Atsushi Tajiri, Masayuki Shono, Minoru Sawada, Akira Ibaraki (1.Materials and Devices Development Center, Sanyo Electric Co., Ltd., 2.LED Division, Tottori Sanyo Electric Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW

Yasuaki Yoshida, Harumi Nishiguchi, Motoko Sasaki, Sinji Abe, Akihito Ohno, Masayoshi Takemi, Ken-ichi Ono, Jun-ichi Horie, Hiromasu Matsuoka, Yasunori Miyazaki, Tetsuya Yagi, Etuji Omura (1.High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[A-4-5L] High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo, Il Ki Han, Jung Il Lee, Ji Chai Jeong (1.Nano Device Research Center, Korea Institute of Science and Technology, 2.Dept. of Radio Engineering, Korea University)

2003 International Conference on Solid State Devices and Materials |PDF Download