[P3-15] Influence of Humidity on Electrical Characteristics of Porous Silica Films

S. Sakamoto, S. Kuroki, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-16] Chemical structure of N Atoms in the Transition Region of the SiO(N)/Si Interface -A New Spectroscopic Method with Hydrogenation Reaction in HF Acid-

Naomi Mizuta, Satoru Watanabe (1.Fujitsu Laboratories Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-17] The sheet resistance instability in the sub-100 nm tungsten poly-metal wordline due to an in-situ NH3 pre-annealing during the sealing nitride deposition

Kwan-Yong Lim, Jung-Ho Lee, Heung-Jae Cho, Jae-Geun Oh, Byung-Seop Hong, Se-Aug Jang, Yong-Soo Kim, Hong-Seon Yang, Hyun-Chul Sohn (1.Memory R&D Division, Hynix Semiconductor Inc.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-18] Influence of interface layers and bottom electrodes on (Ba,Sr)TiO3 thin film leakage current

Masaki Yamato, Hiroshi Yamada, Takamaro Kikkawa (1.Research Center for Nanodevice and Systems, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-19] Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

Haruka Shimizu, Masashi Sasagawa, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-20L] A Novel Process for Oxynitride by Post-Oxidation of NH3 Plasma Nitridation

Chao Sung Lai, Kung Ming Fan (1.Department of Electronic Engineering, Chang Gung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P3-21L] Origin of Interfacial Reaction Constant for Si Thermal Oxidation

Toru Akiyama, Hiroyuki Kageshima (1.NTT Basic Research Laboratories, NTT Corporation, 2.Department of Physics Engineering, Mie University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-1] Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy

Chee-Wee Eng, Wai-Shing Lau, Yao-Yao Jiang, David Vigar, Kheng-Chok Tee, Lap Chan, Vanissa Sei-Wei Lim, Alastair Trigg (1.School of Electrical and Electronic Engineering, Nanyang Technological University, 2.Department of Technology Development, Chartered Semiconductor Manufacturing Ltd, 3.Institute of Microelectronics)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-2] Influence of Nitrogen Profile on Metal Workfunction in Mo/SiO2/Si MOS Structure

Masaki Hino, Takaaki Amada, Nobuhide Maeda, Kentaro Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-3] Compact Electrical Characterization of Nano-CMOS Transistor with 1.2nm Ultrathin Gate Dielectric

Hee Sung Kang, Wu-yun Quan, Kyung Soo Kim, Chang Bong Oh, Hyuk Ju Ryu, Chang Ki Baek, Bomsoo Kim, Young Wug Kim, Kwang Pyuk Suh, Dae M. Kim (1.Technology Development Team, System LSI Division, Samsung Electronics, 2.Computation Sciences, Korea Institute for Advanced Study)

2003 International Conference on Solid State Devices and Materials |PDF Download