[B-7-1] Low Tinv (≤ 1.8 nm) Metal-Gated MOSFETs on SiO2 Based Gate Dielectrics for High Performance Logic Applications

V. Ku, R. Amos, A. Steegen, C. Cabral, Jr., V. Narayanan, P. Jamison, P. Nguyen, Y. Li, M. Gribelyuk, Y. Wang, J. Cai, A. Callegari, F. McFeely, F. Jamin, K. Wong, E. Wu, A. Chou, D. Boyd, H. Ng, M. Ieong, C. Wann, R. Jammy, W. Haensch (1.IBM Semiconductor Research and Development Center, 2.IBM T.J. Watson Research Center)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] New Dual Metal Gate by Using WSix for nMOS and Pt-alloyed WSix for pMOS

Kouji Matsuo, Osamu Arisumi, Kyoichi Suguro (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Highly Selective Etching of Ta/TaNx Metal Electrode to Si3N4 Gate Dielectric Employing SiCl4-NF3 Gas Mixture Plasma

Hiroyuki Shimada, Koichi Maruyama (1.New Device Development Group, SEIKO EPSON Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] High Quality Silicon Nitride Film Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition with Dual Gas Shower Head

Hiroaki Tanaka, Zhong Chuanjie, Yukio Hayakawa, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Ni-salicided Poly-Si/poly-SiGe Layered Gate Technology for 65nm-node CMOSFETs

Akiyoshi Muto, Hiroshi Ohji, Takeshi Maeda, Kazuyoshi Torii (1.Semiconductor Leading Edge Technologies, Inc.(SELETE), Research Dept. 1)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Pre-amorphization and co-implantation suitability for advanced PMOS devices integration

Radu Surdeanu, Bartek J. Pawlak, Richard Lindsay, Mark van Dal, Gerben Doornbos, Charles J.J. Dachs, Youri V. Ponomarev, Josine J. Loo, Kirklen Henson, Marcel A. Verheijen, Monja Kaiser, Xavier Pages, Malgorzata Jurczak, Peter A. Stolk (1.Philips Research Leuven, 2.IMEC, 3.Philips Research Laboratories, 4.ASM International, 5.now at Philips Semiconductors)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Kinetics of Boron Activation by Flash Lamp Annealing

K. Yamashita, M. Noguchi, H. Nishimori, T. Ida, M. Yoshioka, T. Kusuda, T. Arikado, K. Okumura (1.Semiconductor Leading Edge Technologies, Inc., 2.Research and Development Center, Lamp Company, Ushio Inc., 3.Research and Development Center, Dainippon Screen MFG. Co. Ltd., 4.Research Center for Advanced Science and Technology, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] High-Speed Damage-Free Contact Hole Etching using Dual Shower Head Microwave-Excited High-Density Plasma Equipment

Tetsuya Goto, Hiroshi Yamauchi, Takeyoshi Kato, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Ultralow-power CMOS/SOI Circuit Technology for Ubiquitous Communications

Y. Kado, Y. Matsuya, S. Mutoh, J. Terada, H. Morisawa, Y. Sato, T. Douseki, H. Kyuragi (1.NTT Microsystem Integration Labolatories)

2003 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] On the Performance Advantage of undoped ultra thin-film FD-SOI MOSFETs

Hideaki Matsuhashi, Tomohiro Okamura, Takakuni Douseki, Noriyuki Miura, Tadashi Chiba, Shunsuke Baba (1.OKI Electric Industry co., Ltd., 2.NTT Microsystem Integration Laboratories, NTT)

2003 International Conference on Solid State Devices and Materials |PDF Download