[C-3-4] Optimum TiSi2 Ohmic Contact Process for Sub-100nm Devices

Hee Sook Park, Jong Myeong Lee, Sang Woo Lee, Jea Hwa Park, Kwang Jin Moon, Sang Bom Kang, Gil Heyun Choi, U In Chung, Joo Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Pt/BST/Pt Capacitor Technology for 0.15μm Embedded DRAM

Y. Tsunemine, T. Okudaira, K. Kashihara, A. Yutani, K. Yamada, H. Shinkawata, M. K. Mazumder, Y. Ohno, H. Itoh, M. Yoneda, Y. Okuno, A. Tsuzumitani, H. Ogawa, Y. Mori (1.ULSI Development Center, Mitsubishi Electric Corp., 2.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Low Resistive Contacts of TiN-Barrier and Ru-Electrode Using PCM Sputtering for MIM-Ta2O5 Capacitors in Giga-Bit DRAMs

Yoshitaka Nakamura, Tsuyoshi Kawagoe, Hiroshi Sakuma, Hiromu Yamaguchi, Isamu Asano, Mitsuhiro Horikawa, Keiji Kuroki, Kenji Tanaka, Yasuhiko Ueda, Hidekazu Goto (1.Elpida Memory, Inc.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] A Noble SiON/AlO Structure at High-κ/poly-Si Interface for Storage Capacitors of High Density DRAMs

Osamu Tonomura, Hiroshi Miki (1.Central Research Laboratory, Hitachi, Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-4-4] A Highly Reliable TiN/Al2O3/TiN MIM Technology for Embedded DRAMs

L.-L. Chao, C. D. Wu, H. L. Lin, Y. L. Tu, K. Y. Lin, C.-Y. Yu, C. Y. Chen, F. J. Shiu, C. T. Ho, C.-S. Tsai, S.-G. Wuu, C. Wang (1.Memory Technology Division, Taiwan Semiconductor Manufacturing Company, Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Stress Migration Phenomena of Cu interconnects

Takayuki Oshima, Ishikawa Kensuke, Tatsuyuki Saito, Hideo Aoki, Kenji Hinode (1.Device Development Center, Hitachi, Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Mechanical property control of Low-k Dielectrics for Diminishing CMP-related Defects in Cu-damascene Interconnects

K. Hijioka, F. Ito, M. Tagami, H. Ohtake, T. Takeuchi, S. Saitoh, Y. Hayashi (1.Silicon Systems Research Laboratories, NEC Corporation)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] The Delamination Mechanism of Porous Low-k Film during the Cu-CMP Process

S. Kondo, T. Nasuno, S. Ogawa, S. Tokitou, B.U. Yoon, A. Namiki, Y. Sone, K. Misawa, T. Yoshie, K. Yoneda, M. Shimada, S. Sone, H.J. Shin, N. Ohashi, I. Matsumoto, N. Kobayashi (1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Novellus Systems Japan, Inc.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] In-situ Measurement of Friction Force during Cu Chemical Mechanical Polishing

Hisanori Matsuo, Akira Ishikawa, Takamaro Kikkawa (1.MIRAI Project, ASET, 2.MIRAI Project, ASRC, AIST, 3.RCNS, Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] High-modulus Porous MSQ Films for Cu/Low-k Integration (keff < 2.7)

K. Misawa, S. Sone, H.J. Shin, K. Inukai, Y. Sudo, S. Kondo, B.U. Yoon, S. Tokitoh, K. Yoneda, T. Yoshie, N. Ohashi, N. Kobayashi (1.Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete))

2003 International Conference on Solid State Devices and Materials |PDF Download

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