[F-1-6] InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT)

Chun-Yuan Chen, Hung-Ming Chuang, Sue-I Fu, Po-Hsien Lai, Yan-Ying Tsai, Chung-I Kao, Wen-Chau Liu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-1-7] High-Quality Two-Dimensional Electron Gas at Large Scale GaN/AlGaN Wafer Interface Prepared by Mass Production MOCVD Systems

Syoji Yamada, Takashi Ohnishi, Tomoyasu Kakegawa, Masashi Akabori, Toshikazu Suzuki, Hiroshi Sugiura, Fumihiko Nakamura, Eiichi Yamaguchi, Hiroji Kawai (1.Center for Nano Materials and Technology, JAIST, 2.Powdec K.K)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-1] MOVPE Growth of Wurtzite InN and its Characteristics

Takashi Matsuoka, Hiroshi Okamoto, Masashi Nakao, Hiroshi Harima, Hiroko Takahata, Hisatsugu Mitate, Seiichirou Mizuno, Yasuhiro Uchiyama, Toshiki Makimoto (1.NTT Basic Research Laboratories, 2.NTT Photonics Laboratories, 3.Kyoto Institute of Technology, Dept. of Electronics and Information Science, 4.NTT Advanced Technology, 5.Meiji University, Dept. of Electrical and Electronic Engineering)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-2] Extrinsic Base Regrowth of p-InGaN for Npn-type GaN/InGaN Heterojunction Bipolar Transistor

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation, 2.The University of Electro-Communications, Dept. of Applied Physics and Chemistry)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-3] Improvement of DC and RF characteristics of AlGaN/GaN HEMTs by thermally annealed Ni/Pt/Au Schottky gate

Takuma Nanjo, Naruhisa Miura, Toshiyuki Oishi, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Shigenori Nakatsuka, Akira Inoue, Takahide Ishikawa, Yoshio Matsuda, Hiroyasu Ishikawa, Takashi Egawa (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Microwave Device Development Dept., Mitsubishi Electric Corporation, 3.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-4] The improvement of DC performance in AlGaN/GaN HFET with isoelectronic Al doped channel

Chang Min Jeon, Jae-Hoon Lee, Jung-Hee Lee, Jong-Lam Lee (1.Dept. of Materials Science & Engineering, Pohang University of Science and Technology (POSTECH), 2.School of Electronic Engineering & Computer Science, Kyungpook National University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5] Drain Current DLTS of AlGaN/GaN MIS-HEMTs

T. Okino, M. Ochiai, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-2-6] Low damage, high selectivity Ar/Cl2/CH4/O2 gate recess etching for AlGaN/GaN HEMT fabrication

Wen-Kai Wang, Yu-Jen Li, Cheng-Kuo Lin, Yi-Jen Chan, Guan-Ting Chen, Jen- Inn Chyi (1.Department of Electrical Engineering, National Central University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] Optical and Electrical Control of Ferromagnetism in II-VI Quantum Wells

Tomasz Dietl (1.Institute of Physics, Polish Academy of Sciences)

2003 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] Type-II InAs-based Quantum Cascade Lasers

K. Ohtani, H. Ohno (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF Download