[D-5-1] FinFET Promise and Challenges

Tsu-Jae King (1.Department of Electrical Engineering and Computer Sciences, University of California)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] High-Aspect Ratio Gate Formation of Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation of Silicon Gate

Akira Katakami, Kei Kobayashi, Hideo Sunami (1.Hiroshima University, Research Center for Nanodevices and Systems, 2.Fujitsu Laboratories Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] An Experimental Study of The Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate MOSFETs

Yongxun Liu, Kenichi Ishii, Meishoku Masahara, Toshiyuki Tsutsumi, Hidenori Takashima, Eiich Suzuki (1.Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST))

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] P-channel Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching

Meishoku Masahara, Takashi Matsukawa, Shinichi Hosokawa, Kenichi Ishii, Yongxun Liu, Hisao Tanoue, Kunihiro Sakamoto, Hiromi Yamauchi, Seigo Kanemaru, Eiichi Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] SiGe in Advanced CMOS Devices - - an unique material equally helpful when present or absent

Thomas Skotnicki (1.STMicroelectronics, Crolles, France)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Structural Characterization of Strained Silicon Substrates by X-Ray Diffraction and Reflectivity

M. Erdtmann, T. A. Langdo, C. J. Vineis, H. Badawi, M. T. Bulsara (1.AmberWave Systems Corp.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

Koji Kita, Masashi Sasagawa, Kazuyuki Tomida, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si Layered Structure by Precursor Modulation

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao (1.Department of Electronics, Kyushu University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-7-0L] Simultaneous formation of multi-wall carbon nanotubes and their low-resistance ohmic contacts for future ULSI via interconnects

Mizuhisa Nihei, Akio Kawabata, Masahiro Horibe, Yuji Awano (1.Fujitsu Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] Characteristics of a Carbon Nanotube FET Analyzed as a Ballistic Nanowire FET

Youji Kimura, Tomo Shimizu, Kenji Natori (1.Institute of Applied Physics, University of Tsukuba)

2003 International Conference on Solid State Devices and Materials |PDF Download

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