[H-3-4] Electrical and Physical Characteristics of the High-K Gd₂O₃ (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

J. S. Chiu¹、C. H. Kao¹、H. Chen²、P. Y. Tsung¹、Y. C. Liao¹、W. S. Liao¹、Y. T. Chung¹、H. C. Fan¹、P. L. Lai¹、C. Y. Huang¹、C. S. Lin¹、J. M. Dai¹ (1.Chang Gung Univ.(Taiwan)、2.Chi Nan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-5] Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization

J. Jiang¹、S. Kuroki¹、K. Kotani¹、T. Ito¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-4-1] Recent advances in InN-based III-nitrides towards novel nanostructure photonic devices

A. Yoshikawa¹、Y. Ishitani¹、S. B. Che¹、N. Hashimoto¹、A. Yuki¹、H. Watanabe¹、K. Kusakabe¹ (1.Chiba Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-4-2] Epitaxial overgrowth of GaN Nanorods on Si (111) substrates by rf-plasma-assisted molecular-beam Epitaxy

J. T. Ku¹、T. H. Yang¹、J. R. Chang¹、Y. Y. Wong¹、W. C. Chou¹、C. Y. Chang¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-4-3] Growth of (10τ3) semipolar GaN on Si substrate with a CrN interlayer by molecular beam epitaxy

K. W. Liu¹、T. H. Hsueh¹、S. J. Young¹、H. Hung¹、S. X. Chen¹、Y. Z. Chen¹、S. J. Chang¹ (1.Nation Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-4-4] Growth of Quaternary AlInGaN with Various TMI Molar Rates

S. F. Yu¹、S. J. Chang¹、S. P. Chang¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-1] Improvement in a-GaN crystal quality by investigating different buffer layer

H. C. Hsu¹、Y. K. Su¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-2] Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

H. Song^1,2、J. S. Kim¹、E. K. Kim¹、Y. G. Seo²、S. M. Hwang² (1.Hanyang Univ.(Korea)、2.Korea Electronics Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-3] Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared using Two-Step-Etched Patterned Sapphire Substrates

Y. C. Lu¹、S. F. Yu²、Y. C. S. Wu³、C. H. Chiang¹、W. C. Hsu⁴、S. J. Chang²、R. M. Lin¹ (1.Chang Gung Univ.(Taiwan)、2.National Cheng Kung Univ.(Taiwan)、3.National Chiao Tung Univ.(Taiwan)、4.Sino-American Silicon Products Inc.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-4] Improvement of the blue LED using patterned sapphire substrates with low threading dislocation densities

S. M. Jeong¹、S. Kissinger¹、Y. H. Ra¹、S. H. Yun¹、D. W. Kim¹、S. J. Lee²、J. S. Kim¹、C. R. Lee¹ (1.Chonbuk National Univ.(Korea)、2.Korea Photonics Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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