[A-1-1] Ultrathin Body and BOX SOI and _SSOI for Low Power Application at the 22nm technology node and below

F. Andrieu¹、C. Fenouillet-Béranger¹、O. Weber¹、S. Baudot¹、C. Buj¹、J. P. Noel¹、O. Thomas¹、O. Rozeau¹、P. Perreau¹、L. Tosti¹、L. Brévard¹、O. Faynot¹ (1.CEA-LETI/MINATEC)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] V_th Dependence of V_th Variability in Intrinsic Channel SOI MOSFETs with Ultra-Thin BOX

C. Lee¹、A. T. Putra¹、K. Shimizu¹、T. Hiramoto^1,2 (1.Univ. of Tokyo(Japan)、2.MIRAI-Selete(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO₂ gate stack

C. Buj-Dufournet¹、F. Andrieu¹、O. Faynot¹、O. Weber¹、F. Allain¹、L. Tosti¹、C. Fenouillet-Béranger¹、D. Lafond¹、S. Deleonibus¹ (1.CEA-LETI/MINATEC)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-4] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique

S. Dissanayake¹、S. Sugahara²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo(Japan)、2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-5] The Impact of Uni-axial Strain and Dynamic Body Biases on Low Frequency Noise in Nanoscale pMOSFETs

K. L. Yeh¹、C. Y. Ku¹、W. L. Hong¹、J. C. Guo¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-6] Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors

S. M. Koh¹、C. M. Ng²、Z. Y. Zhao³、H. Maynard³、N. Variam³、T. Henry³、Y. Erokhin³、G. Samudra¹、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Varian Semiconductor(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-7] The Tunnel Source n-MOSFET: A Novel Asymmetric Device for Low Power Applications

N. Venkatagirish¹、A. Tura¹、R. Jhaveri¹、H. Y. Chang¹、J. Woo¹ (1.UCLA)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] A new definition of threshold voltage by constant slope for analysis of statistical variations of MOSFETs

T. Tanaka¹、H. Suzuki¹、O. Yamasaki¹ (1.Fujitsu Microelectronics Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida^1,2、K. Eikyu¹、A. Shimizu¹、T. Yamashita¹、H. Oda¹、Y. Inoue¹、K. Shibahara² (1.Renesas Tech. Corp.(Japan)、2.Hiroshima Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Impact of interface roughness on threshold-voltage variation in ultra-small three-dimensional MOSFETs

N. Mori¹、H. Minari¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード