[B-7-2] ¹⁸O isotope tracing study of GeO Desorption from GeO₂/Ge Structure

S. Wang¹、K. Kita^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo (Japan)、2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] Diffusion control of n-type impurities in Ge using co-doping technique for ultra-shallow and highly doped n⁺/p junction in Ge nMOSFETs

M. Koike¹、K. Tatsumura² (1.MIRAI-Toshiba(Japan)、2.Toshiba Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-4] Effects of MIS Interfacial Layers on Interface Trap Density near Conduction Band Edge in Ge MIS Structures

N. Taoka¹、W. Mizubayashi¹、Y. Morita¹、S. Migita¹、H. Ota¹、S. Takagi^1,2 (1.MIRAI-AIST(Japan)、2.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-5] Spectroscopic Ellipsometry Study on Defects Generation in GeO₂/Ge stacks

K. Kita^1,2、M. Yoshida¹、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo(Japan)、2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-1] Process Condition Dependence of Random V_T Variability in NFETs and PFETs

T. Tsunomura¹、A. Nishida¹、K. Takeuchi¹、S. Inaba¹、S. Kamohara¹、K. Terada²、T. Hiramoto^1,3、T. Mogami¹ (1.MIRAI-Selete(Japan)、2.Hiroshima City Univ.(Japan)、3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-2] Comprehensive Design Methodology of Extension Profile to Suppress Boron TED in High Performance High-k/Metal SiGe pMOSFETS

C. Y. Kang¹、Y. H. Kim²、M. S. Park³、J. W. Oh¹、B. G. Min⁴、K. S. Lee⁴、S. K. Banerjee²、P. Majhi¹、H. H. Tseng¹、R. Jammy¹ (1.SEMATECH(USA)、2.Univ. of Texas at Austin(USA)、3.POSTECH(Korea)、4.Jusung Engineering(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-3] Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Spider-Web of In-Layer Pt Network

M. Tsuchiaki¹、A. Nishiyama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-4] Concentration of Active Dopants at NiSi/Si Interface Segregated by "Snowplow" Effect for Schottky Barrier Height Tuning

S. Migita¹、Y. Morita¹、N. Taoka¹、W. Mizubayashi¹、H. Ota¹ (1.MIRAI-AIST)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-5] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet

K. Matsumoto¹、S. Higashi¹、H. Furukawa¹、T. Okada¹、H. Murakami¹、S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-1] On the Reliability of and Self-Compensation in Strained Transistors

M. A. Alam¹、A. E. Islam¹ (1.Purdue Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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