[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno^1,2、N. Mizoguchi¹、K. Tanimoto¹、T. Yamauchi¹、T. Tezuka³、T. Sameshima⁴ (1.Kanagawa Univ.(Japan)、2.MIRAI-NIRC(Japan)、3.MIRAI-Toshiba(Japan)、4.Tokyo Univ. of Agri. And Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] NiSi metal S/D transistors with ultimaltely low Schottky barrier by sulfur Implantation After Silicidation Process

Y. Nishi¹、A. Kinoshita¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] A New Diamond-like Carbon (DLC) Ultra-High Stress Liner Technology for Direct Deposition on P-Channel Field-Effect Transistors

B. Liu¹、M. C. Yang²、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Data Storage Inst.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Investigation on Enhanced Impact Ionizaion in Uniaxially Strained Si MOSFET

S. Adachi¹、T. Asano¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Influence of Carrier Transit Delay on CMOS Switching Performance

D. Hori¹、M. Miyake¹、N. Sadachika¹、H. J. Mattausch¹、M. Miura-Mattausch¹、T. Iizuka²、T. Hoshida²、K. Matsuzawa²、Y. Sahara²、T. Tsukada² (1.Hiroshima Univ.(Japan)、2.STARC(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Microscopic Characterization of Devices by Scanning Transmission Electron Microscopy: From Single Atom Imaging to Macroscopic Properties

S. J. Pennycook¹、K. van Benthem¹、A. G. Marinopoulos¹、S. T. Pantelides¹ (1.Oak Ridge National Lab.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Three-Dimensional Visualization Technique for Crystal Defects in High Performance CMOS Devices with Embedded SiGe-Source/Drain

S. Kudo¹、N. Nakanishi¹、Y. Hirose¹、K. Sato¹、T. Yamashita¹、H. Oda¹、K. Kashihara¹、N. Murata¹、T. Katayama¹、K. Asayama¹、J. Komori¹、E. Murakami¹ (1.Renesas Tech. Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] X-ray photoelectron spectroscopy study of dipole effects at HfO₂/SiO₂/Si stacks

L. Q. Zhu¹、K. Kita¹、T. Nishimura¹、K. Nagashio¹、S. K. Wang¹、A. Toriumi¹ (1.Univ. of Tokyo)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Impact of Si Oxidation States on Dipole Layer at HfO₂/Si Interface

N. Miyata^1,2、Y. Abe²、T. Yasuda¹ (1.AIST(Japan)、2.Musashi Inst. Of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-5] Evaluation of Effective Work Function of Pt on Bi-layer High-k/SiO₂ Stack Structure using by Backside X-ray Photoelectron Spectroscopy

T. Mori¹、A. Ohta¹、H. Murakami¹、S. Higashi¹、S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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