[I-9-1] Novel Second Harmonic Generation Optical Devices by using Nano-Domain Engineering

M. Minakata¹、H. Awano¹、M. Ohotsuka¹、F. Iwata¹、T. Taniuchi² (1.Shizuoka Univ.(Japan)、2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-9-2] Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-oriented GaAs Substrate

F. Tanaka¹、T. Takahashi¹、K. Morita¹、T. Kitada¹、T. Isu¹ (1.Univ. of Tokushima)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-9-3] ZnO Channel Waveguides for Nonlinear Optic Applications

Y. Morales¹、T. Kita¹、A. Tsukazaki¹、M. Kawasaki¹、Y. Ohtera¹、H. Yamada¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-9-4] Evidence of Carrier Accumulation Effects on the Response Enhancement in Thin-Film Electrochromic Devices

H. Yoshimura¹、Y. Tsuchiya²、H. Mizuta²、N. Koshida¹ (1.Tokyo Univ. of Agri. and Tech.(Japan)、2.Southampton Univ.(UK))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-9-5] Accurate Measurement of Nonlinear Optical Coefficients of Gallium Nitride

M. Abe¹、H. Sato²、J. Suda³、M. Yoshimura⁴、Y. Kitaoka⁴、Y. Mori⁴、I. Shoji²、T. Kondo¹ (1.Univ. of Tokyo(Japan)、2.Chuo Univ.(Japan)、3.Kyoto Univ.(Japan)、4.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-9-6L] 2 x 2 Thermooptic Silicon Oxynitride Optical Switch Incorporating the Cascaded Multimode Interference Waveguides

R. W. Chuang^1,2、M. T. Hsu¹、Z. L. Liao¹ (1.National Cheng Kung Univ.(Taiwan)、2.National Nano Device Labs.(Tiawan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-1] Materials and Strain Issues in AlGaN/GaN HEMT Degradation

E. Muñoz¹、C. Rivera¹、F. Gonzalez-Posada¹、A. Redondo^1,2、F. Romero¹、R. Cuerdo¹、F. Calle¹、R. Gago³、A. Jimenez⁴、C. Palacio² (1.Univ. Politécnicade Madrid(Spain)、2.Univ.Autónoma de Madrid(Spain)、3.CSIC(Spain)、4.Univ. Alcalá de Henares(Spain))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-2] Compressively Strained-In_xAl_1-xN/Al_0.22Ga_0.78N/GaN (x = 0.245-0.325) Heterostrucures FETs with a Regrown AlGaN Contact Layer

M. Hiroki¹、N. Maeda¹、N. Shigekawa¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-3] AlGaN/GaN HFET using AlN/GaN Superlattice Barrier Layer

S. Yagi¹、Y. Kawakami¹、X. Q. Shen¹、A. Nakajima¹、T. Ide¹、M. Shimizu¹ (1.AIST)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-4] Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon

J. Selvaraj¹、S. Lawrence Selvaraj¹、T. Egawa¹ (1.Nagoya Inst. of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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