[J-2-7L] High-electron-mobility InAs thin layers down to ~ 100 nm obtained by epitaxial lift-off and normal/inverted van der Waals bonding on flexible substrates
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
707件中(381 - 390)
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード
2009 International Conference on Solid State Devices and Materials |PDF ダウンロード