[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya¹、A. Kaneko¹、K. Nagatomo¹、M. Goto¹、K. Tatsumura¹、I. Hirano¹、S. Kawanaka¹、A. Azuma¹、K. Nakajima¹、T. Aoyama¹、K. Eguchi¹、A. Nishiyama¹、Y. Toyoshima¹、Y. Tsunashima¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei¹、D. Kosemura¹、K. Nagata¹、H. Akamatsu¹、S. Mayuzumi^1,2、S. Yamakawa²、H. Wakabayashi²、A. Ogura¹ (1.Meiji Univ.(Japan)、2.Sony Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask

H. Shinohara¹、A. Katakami¹、T. Watanabe¹、M. Hayashi¹、S. Kamiyama¹、Y. Sugita¹、T. Matsuki¹、T. Eimori¹、J. Yugami¹、K. Ikeda¹、Y. Ohji¹ (1.Selete)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique

T. Shimizu¹、Y. Arayashiki¹、S. Inumiya¹、K. Nakajima¹、T. Aoyama¹、K. Eguchi¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Influence of Gate Electrode Stress on Channel Stress and Device Performance in Gate-First W/TiN Gate MOSFETs

T. Matsuki¹、J. Yugami¹、T. Eimori¹、Y. Nara¹、K. Ikeda¹ (1.Selete)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Advanced Low Temperature Raised S/D Epitaxy Using Cyclic and Poly-Selective Techniques

N. Loubet¹、P. Khare¹、Q. Liu¹、M. Takayanagi²、R. Sampson¹ (1.STMicroelectronics(USA)、2.Toshiba America Electronic Components(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Impact of Very Low Series Resistance due to Raised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100-nm nMOSFET

R. Kuroda¹、T. Isogai¹、H. Tanaka¹、Y. Nakao¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] First LSI Applicable Thin SOI Films Formed by Lateral Solid Phase Epitaxy

H. Ishida¹、F. Aiso¹、M. Mizukami¹、K. Nishihara¹、T. Iguchi¹、D. Ichinose¹、A. Fukumoto¹、T. Suzuki¹、F. Arai¹、I. Mizushima¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] High Hole Mobilities in Single-Crystalline Ge Thin-Films on Insulating Substrate Formed by SiGe Mixing-Triggered Directional Melting-Growth

K. Toko¹、T. Tanaka¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] High Electron Mobility Ge n-Channel MOSFETs with GeO₂ grown by High Pressure Oxidation

C. H. Lee¹、T. Nishimura^1,2、T. Tabata^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo(Japan)、2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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