[P-3-17] The Structure and Power-level Dependences of CMOS RF Power Cell Degradation by Hot-carrier Stress with Load Pull System

C. H. Liu¹、Y. K. Su¹、R. L. Wang²、C. H. Tu³、Y. Z. Juang³ (1.National Cheng Kung Univ. (Taiwan)、2.National Kaohsiung Normal Univ.(Taiwan)、3.CIC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-18] Anomalous Hot-Carrier-Induced Saturation Drain Current Degradation in DEMOS Transistors

J. F. Chen¹、K. W. Lin¹、S. Y. Chen¹、K. M. Wu²、J. R. Shih²、K. Wu² (1.National Cheng Kung Univ.(Taiwan)、2.TSMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-19] Subthreshold SRAM with Enhanced Stability using Ultra-Thin-Body and BOX SOI

V. P. H. Hu¹、M. L. Fan¹、P. Su¹、C. T. Chuang¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-20] Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO₂ nMOSFET for Very Low Voltage Operation (0.7V)

W. C. Wu¹、T. S. Chao¹、K. T. Wang¹、S. C. Lee¹、T. H. Chiu¹、T. Y. Lu¹、C. S. Lai²、J. C. Wang²、M. W. Ma¹、K. H. Kao¹、W. C. Lo¹ (1.National Chiao Tung Univ.(Taiwan)、2.Chang Gung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-21] Low Frequency Noise (1/f ) Improvements on CMOS Transistors with a Single nmm⁺ Doped Poly Si-SiGe Gate Stack

H. G. Jiménez¹、L. T. Manera^1,2、R. Wada²、J. A. Diniz^1,2、I. Doi^1,2、P. J. Tatsch^1,2、H. E. Figueroa^1,2、J. W. Swart^1,2 (1.CCS-UNICAMP(Brazil)、2.Univ. of Campinas(Brazil))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-22] Bi-Directional SCR Device with Dual-Triggered Mechanism for ESD Protection in Extended-Voltage-Swing I/O Application

Z. W. Jiang¹、S. H. Chen¹、M. D. Ker² (1.Indus. Tech. Res. Inst.(Taiwan)、2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-23] Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

C. K. Chiang¹、Y. H. Chen¹、N. C. Su¹、S. J. Wang¹、C. C. Huang¹、H. Y. Huang¹、C. H. Wu² (1.National Cheng Kung Univ.(Taiwan)、2.Chung Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-1] HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell

D. Kosemura^1,4、M. Takei¹、K. Nagata¹、H. Akamatsu¹、M. Hattori¹、D. Katayama¹、T. Nishita²、T. Nakanishi²、Y. Hirota²、M. Machida³、J. Y. Son³、T. Koganezawa³、I. Hirosawa³、A. Ogura¹ (1.Meiji Univ.(Japan)、2.Tokyo Electron Ltd.(Japan)、3.JASRI(Japan)、4.JSPS(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-2] Electrical Characteristics of Engineered ZrO₂/SiO₂ Tunnel Barrier with a High-k HfO₂ Trapping Layer for Non-Volatile Memory

H. W. You¹、G. H. Park¹、J. W. Jung²、W. J. Cho¹ (1.Kwangwoon Univ.(Korea)、2.Sejong Univ.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-3] Explanation of anomalous erase behaviour and the associated device instability in TANOS Flash using a new trap characterization technique

R. Degraeve¹、M. Zahid¹、G. Van den bosch¹、P. Blomme¹、L. Breuil¹、B. Kaczer¹、M. Mercuri¹、A. Rothschild¹、A. Cacciato¹、M. Jurczak¹、G. Groeseneken²、J. Van Houdt¹ (1.IMEC(Belgium)、2.Catholic Univ. Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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