[P-6-9] Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and their Applications as Temperature Sensors

A. H. Zahmani¹、A. Nishijima¹、Y. Morimoto¹、H. Wang^1,2、J. F. Li²、A. Sandhu¹ (1.Tokyo Tech(Japan)、2.Tsinghua Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-10] Stress Analysis in GaN Epilayer after Chemical Mechanical Polishing (CMP) from Sapphire Substrates

Y. K. Su^1,2、C. C. Kao¹、C. L. Lin²、J. J. Chen¹ (1.National Cheng Kung Univ.(Taiwan)、2.Kun-Shan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-11] Investigation of Electrostatic Integrity for Ultra-Thin-Body GeON MOSFET

V. P. H. Hu¹、Y. S. Wu¹、P. Su¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-12] The Effect of Distribute Bragg Reflector in Device Temperature of AlGaInP Light-emitting Diode

Y. K. Yang¹、W. C Lien¹、Y. S. Wang²、L. H. Zen¹、J. F. Chen¹、N. C. Chen¹ (1.Chang Gung Univ.(Taiwan)、2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-13] Improved Characteristics of InAlAs/InGaAs MOS-MHEMTs by using Ozone Water Oxidation Method

A. Y. Kao¹、C. S. Ho²、W. C. Hsu²、Y. N. Lai²、C. S. Lee¹ (1.Feng Chia Univ.(Taiwan)、2.National Cheng Kung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-14] Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

D. H. Nam¹、K. I. Chai¹、S. S. Park¹、J. G. Park¹、H. J. Yun¹、W. H. Choi¹、H. D. Lee¹、G. W. Lee¹ (1.Chungnam National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-15] Transparent AZO-Gated Double δ-Doped AlGaAs/InGaAs HEMTs

B. Y. Chou¹、C. S. Lee¹、W. C. Hsu²、S. Y. Chu²、Y. N. Lai²、C. S. Ho²、Z. L. Tseng²、M. F. Shih² (1.Feng Chia Univ.(Taiwan)、2.National Cheng Kung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-16] Effect of Two-Step E-Beam SiO₂ Passivation on AlGaN/GaN HEMT Performance

H. L. Yu¹、H. K. Lin¹、Y. J. Chan¹ (1.National Central Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-17] GZO/GaN Schottky Barrier Ultraviolet Band-pass Photodetector with a Low-temperature-grown GaN Cap Layer

K. H. Chang¹、J. K. Sheu¹、M. L. Lee²、T. H. Hsueh¹、C. C. Yang¹、K. S. Kang¹、J. F. Huang¹、L. C. Peng¹、W. C. Lai¹ (1.National Cheng Kung Univ.(Taiwan)、2.Southern Taiwan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-18] Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs

J. H. Kim^1,2、H. G. Choi¹、H. J. Song¹、C. H. Roh¹、J. H. Lee¹、J. H. Park²、C. K. Hahn¹ (1.Korea Electronics Tech. Inst.(Korea)、2.Korea Univ.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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