[P-3-7] Ultra thin Ni-silicides with low contact resistance on SOI and strained-SOI

L. Knoll¹、Q. T. Zhao¹、S. Habicht¹、C. Urban¹、B. Ghyselen²、S. Mantl¹ (1.Forschungszentrum Juelich(Germany)、2.SOITEC(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-8] Design and Fabrication of Low-actuation Voltage and Low-Insertion Loss RF Switch by CMOS-MEMS and EN/IG Processes

J. T. Huang¹、P. C. Lin¹、F. H. Yeh¹、Y. K. Hsu¹、K. Y. Lee¹ (1.National Taipei Univ of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-9] Experimental Analysis of Anisotropic Impact Ionization in (110) Surface pMOSFETs

T. K. Kang¹、C. M. Kuo¹、C. L. Huang¹、H. L. Liu¹、C. Y. Wu¹、S. L. Wu¹、Y. T. Huang²、S. J. Chang² (1.Cheng Shiu Univ.(Taiwan)、2.National Cheng Kung Univ(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-10] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique

H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-11] New Observations of FN Stress Induced Performance Degradation of RF MOSFETs

B. Xiao¹、L. Zhang¹、R. Huang¹、D. Wu¹、F. Song¹、Y. Y. Wang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-12] Effects of Negative Bias Temperature Stress-induced Degradation and Mismatch on pMOSFETs in 90 nm Technology

C. H. Tu¹、S. Y. Chen¹、A. E. Chuang¹、H. S. Huang¹、Z. W. Jhou²、S. Chou²、J. Ko² (1.National Taipei Univ. of Tech.(Taiwan)、2.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-13] Subcircuit Compact Model for Dopant-Segregated Schottky Silicon-Nanowire MOSFETs

G. Zhu¹、X. Zhou¹、Y. K. Chin¹、K. L. Pey¹、G. H. See²、S. Lin¹、J. Zhang¹、Z. Chen¹ (1.Nanyang Technological Univ.(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-14] Intrinsic-Parameter-Fluctuated Power-Delay Characteristics in 16-nm-Metal-Gate CMOS Devices and Circuits

M. H. Han¹、C. H. Hwang¹、Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-15] Carrier Transportation of ALD HfLaO Gate Dielectrics with 0.72 nm EOT

H. W. Chen¹、Y. W. Liao¹、S. Y. Chen¹、C. H. Liu²、H. S. Huang¹、L. W. Cheng³、C. T. Lin³、G. H. Ma³ (1.National Taipei Univ. of Tech.(Taiwan)、2.National Taiwan Normal Univ.(Taiwan)、3.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-16] High-Temperature Dependent Data Extraction and Modeling of Effective Channel Mobility in MOSFETs using Measured S-Parameters

B. Ko¹、D. Jung¹、S. Lee¹ (1.Hankuk Univ. of Foreign Studies)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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