[K-9-4L] Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells

S. Izumi¹、S. Gozu²、T. Mozume²、Y. Saeki¹、T. Nukui¹、A. Tackeuchi¹ (1.Waseda Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-1] Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)₃ Precursor

H. Kondo¹、H. Matsui¹、K. Furuta¹、M. Sakashita¹、S. Zaima¹ (1.Nagoya Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-2] Advanced High-k Materials and Electrical Analysis for Memories: the Role of SiO₂-high-k Dielectric Intermixing

L. Morassi¹、L. Larcher¹、L. Pantisano²、A. Padovani¹、R. Degraeve²、M. B. Zahid²、B. J. O'Sullivan² (1.Univ. di Modena e Reggio Emilia(Italy)、2.IMEC(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-3] Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films

K. Miyamoto¹、H. Kondo¹、S. Zaima¹ (1.Nagoya Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-4] Study of La-doped GeO₂ Films from Defect Annihilation Viewpoint

T. Tabata^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo(Japan)、2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-5] Characterization and Improvement of Charge Trapping in Gadolinium Incorporated Hf-based high-k/Metal gated n-MOSFETs

C. W. Chen¹、H. C. Lai¹、Y. L. Yeh¹、W. K. Yeh²、S. H. Shu³、C. T. Lin³、C. H. Hsu³、L. W. Cheng³、M. Ma³ (1.Ming Hsin Univ. of Sci and Tech.(Taiwan)、2.National Univ. of Kaohsiung(Taiwan)、3.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-6] Spectroscopic Studies of Electronic Structure of Intrinsic O-atom Vacancy Defects in Hf Dioxide and Other Transition Metal ™ Oxides

G. Lucovsky¹、K. B. Chung¹、H. Seo¹、J. P. Long¹ (1.North Carolina State Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-7] Electronic Band Structures of Zirconium and Hafnium Oxides

T. Hamada^1,3、T. Ohno^2,3 (1.Hitachi, Ltd.(Japan)、2.Inst. Of Materials Res.(Japan)、3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-8] Threshold Voltage (V_th) Tunability of pMOSFETs with Ternary Hf_xMo_yN_z Metal Gate and Gd₂O₃ High-k Gate Dielectric

H. K. Peng¹、C. S. Lai¹、J. C. Wang¹ (1.Chang Gung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-9] High Performance ZnO Thin-Film Transistors using High-ҝ TiHfO Gate Dielectrics

N. C. Su¹、C. C. Huang¹、Y. H. Chen¹、C. K. Chiang¹、H. Y. Huang¹、C. H. Wu²、A. Chin³、S. J. Wang¹ (1.National Cheng Kung Univ.(Taiwan)、2.National Chung Hua Univ.(Taiwan)、3.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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