[G-6-1] Overview and Future Challenge of High Density FeRAM

I. Kunishima¹、Y. Shimojo¹、A. Konno¹、J. Nishimura¹、T. Okada¹、H. Nakaki¹、Y. Yamada¹、S. Kitazaki¹、H. Furuhashi¹、Y. Minami¹、H. Kanaya¹、S. Shuto¹、K. Tomioka¹、K. Natori¹、K. Yamakawa¹、S. Shiratake¹、D. Takashima¹、T. Hamamoto¹、Y. Watanabe¹、A. Nitayama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-2] A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔV_TH=⅙ ΔV_ERASE for Enterprise SSD Application Ferroelectric(Fe)-NAND Flash Memories

R. Yajima¹、T. Hatanaka¹、M. Takahashi²、S. Sakai²、K. Takeuchi¹ (1.Univ. of Tokyo(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-3] Advancements and Future Challenges of Spin Torque Transfer MRAM

H. Yoda¹、T. Kishi¹、M. Yoshikawa¹、T. Nagase¹、K. Nishiyama¹、E. Kitagawa¹、T. Daibou¹、M. Amano¹、N. Shimomura¹、S. Takahashi¹、T. Kai¹、M. Nakayama¹、H. Aikawa¹、S. Ikegawa¹、M. Nagamine¹、J. Ozeki¹、S. Yuasa²、M. Oogane³、S. Mizukami³、Y. Ando³、Y. Suzuki⁴、Y. Nakatani⁵、T. Miyazaki³、K. Ando² (1.Toshiba Corp.(Japan)、2.AIST(Japan)、3.Tohoku Univ.(Japan)、4.Osaka Univ.(Japan)、5.Univ. of Electro-comminumations(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-4] Effect of Self-heating on TDDB in Ultra-thin MgO Magnetic Tunnel Junctions for Spin MRAM

K. Hosotani¹、M. Nagamine¹、T. Ueda¹、H. Aikawa¹、S. Ikegami¹、Y. Asao¹、H. Yoda¹、A. Nitayama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-1] Switching Mechanism of TaOx ReRAM

Z. Wei¹、Y. Kanzawa¹、K. Arita¹、Y. Katoh¹、S. Muraoka¹、S. Mitani¹、S. Fujii¹、K. Katayama¹、T. Ninomiya¹、T. Takagi¹ (1.Panasonic Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-2] Physical model for reset state of Ta₂O₅/TiO₂ stacked ReRAM

Y. Sakotsubo¹、M. Terai¹、S. Kotsuji¹、T. Sakamoto¹、H. Hada¹ (1.NEC Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-3] High-Speed Multilevel Resistive RAM using RTO WO_X

W. C. Chien^1,2、Y. C Chen¹、E. K. Lai^1,3、Y. Y. Lin¹、K. P. Chang¹、Y. D. Yao²、P. Lin²、S. F. Horng³、J. Gong³、S. C. Tsai¹、C. H. Lee¹、S. H. Hsieh¹、C. F. Chen¹、Y. H. Shih¹、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix Int'l Co., Ltd.(Taiwan)、2.National Chiao Tung Univ.(Taiwan)、3.National Tsing Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-4] Impact of Oxygen Vacancy on Interfacial Band Diagram Ti/Pr_1-xCa_xM_nO₃ Resistive Switching Junctions

S. Asanuma¹、H. Yamada¹、H. Akoh^1,2、A. Sawa¹ (1.AIST(Japan)、2.JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-1] Advances In High Power Density GaN Transistors

Y. F. Wu¹ (1.Transphorm Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-2] Chemical and Electronic Properties of ALD-Al₂O₃/AlGaN Interfaces

Y. Hori¹、C. Mizue¹、K. Ooyama¹、M. Miczek²、T. Hashizume¹ (1.Hokkaido Univ.(Japan)、2.Silesian Univ. of Tech.(Poland))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード