[P-7-21] Enhanced Thermal Radiation Observed in Metal-dielectric-metal Thermal Emitter by Surface Plasmon Resonance

Y. W. Jiang¹、D. C. Tzuang¹、Y. T. Wu¹、M. W. Tsai¹、S. C. Lee¹ (1.National Taiwan Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-1] Growth of Low Dimensional Cobalt Silicides structures on Si(001) surface

B. L. Ong¹、E. S. Tok¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-2] Fabrication of In_0.15Ga_0.85 As Nanohole Templates on GaAs (001) for Quantum Dot Molecules

P. Boonpeng¹、W. Jevasuwan¹、S. Panyakeow¹、S. Ratanathammaphan¹ (1.Chulalongkorn Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-3] Hydrophilic Property of titanium oxide film crystallization induced by an oxidation nickel seed layer

T. W. Lin¹、B. S. Chiang¹、S. Chang²、D. S. Liu¹ (1.National Formosa Univ.(Taiwan)、2.Far East Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-4] Raman Spectroscopy, TEM and Bulk-sensitive XPS Study of Multi-layer Graphene Grown on SiO₂(350 nm)/Si

S. Ogawa^1,2、H. Sumi¹、A. Saikubo^2,3、E. Ikenaga^2,3、M. Sato^2,4、M. Nihei^2,4、Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.JASRI/SPring-8(Japan)、4.Fujitsu Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-5] Investigation on direct-growth Of a-GaN on r-sapphire by MOCVD

H. C. Hsu¹、Y. K. Su¹、S. J. Huang¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-6] Microwave Dielectric Properties of MgTiO₃ by Sintering MgO and TiO₂ Nanostructures

C. F. Shih¹、W. M. Li¹、K. S. Tung¹、C. Y. Hsiao¹、K. T. Hung¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-7] High quality of a-plane (11-20) GaN using a high pressure buffer layer

J. H. Choi¹、L. W. Jang¹、J. W. Ju¹、S. M. Hwang²、I. H. Lee¹ (1.Chonbuk National Univ.(Korea)、2.Korea Electronics Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-8] Generation Mechanism of Photoemission-assisted Plasma on SiO₂(350 nm)/Si Substrate

T. Kaga¹、S. Ogawa^1,2、H. Hozumi¹、H. Sumi¹、M. Sato^2,3、M. Nihei^2,3、Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.Fujitsu Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-8-9] Annealing a Ge layer embedded between the SiO₂ and patterned si substrate into crystalline

C. W. Chiu¹、H. J. Huang¹、T. W. Liao¹、J. H. Lin¹、C. H. Kuan¹ (1.National Taiwan Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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