[P-5-11] A 3-D Binocular Range Sensor LSI with an Enhanced Correlation Signal

M. Kawano¹、N. Kawaguchi²、T. Yoshida²、Y. Arima² (1.Fukuoka Industry, Sci. and Tech. Foundation(Japan)、2.Kyushu Inst. of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-5-12] 3-D Binocular Range Sensor LSI with A High-Speed Data Output Method

N. Kawaguchi¹、M. Kawano²、Y. Arima¹ (1.Kyushu Inst. of Tech.(Japan)、2.Fukuoka Industry, Sci. and Tech. Foundation(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-1] A Micromachined Air-Cavity Oscillator for 94 GHz Applications

Y. Koh¹、U. Son¹、S. Song¹、K. S. Seo¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-2] Fabrication Low-voltage Amorphous Indium Zinc Oxide(a-IZO) Thin Film Transistors using High Dielectric HfO₂ as Gate Insulator at Room Tempature

W. K. Lin¹、C. S. Li²、K. C. Liu²、S. T. Chang¹ (1.National Chung Hsing Univ.(Taiwan)、2.Chang Gung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-3] Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al₂O₃ on InGaAs with Several Surface Treatments

H. D. Trinh^1,2、E. Y. Chang¹、Y. Y. Wong¹、C. Y. Chang¹、C. C. Yu³ (1.National Chiao Tung Univ.(Taiwan)、2.Hanoi National Univ. of Edu.(Vietnam)、3.National Applied Res. Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-4] Enhanced Photovoltaic Effects of InGaN-based Materials for Future Full-Solar-Spectrum Solar Cells

C. C. Yang¹、J. K. Sheu¹、S. J. Tu¹、C. K. Tseng¹、M. S. Huang¹、K. H. Chang¹、T. H. Hsueh¹、M. L. Lee²、L. C. Peng¹、W. C. Lai¹ (1.National Cheng Kung Univ.(Taiwan)、2.Southern Taiwan Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-5] Low Leakage AlGaN/GaN HEMTs with a High On/Off Current Ratio

Y. S. Lin¹、Y. W. Lian¹、S. S. H. Hsu¹、T. C. Lee² (1.National Tsing Hua Univ.(Taiwan)、2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-6] High Breakdown GaN Schottky Diodes with Buried P-layer Structure

Y. W. Lian¹、Y. S. Lin¹、S. S. H. Hsu¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-7] High Mobility In-Ga-Zn-oxide Thin-film Transistor with Sb₂TeO_x Gate Insulator Fabricated by Reactive Sputtering

W. S. Cheong¹、S. M. Yoon¹、S. Yang¹、C. S. Hwang¹ (1.ETRI)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-8] Investigation of Surface Passivation on III-V compound Solar Cell using Photo-electrochemical Oxidation Method

C. Y. Tseng¹、C. H. Wu²、H. Y. Shin²、C. T. Lee¹ (1.National Cheng Kung Univ.(Taiwan)、2.Inst. Of Nuclear Energy Res. Atomic Energy Council(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

707件中(561 - 570)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
次へ »

▲