[D-8-4] Hard Mask through UV Light-induced Damage to Low-k Film During Plasma Process for Dual Damascene

N. Matsunaga^1,2、H. Okumura¹、B. Jinnai¹、S. Samukawa¹ (1.Tohoku Univ.(Japan)、2.Toshiba Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-5] Super-Low-k SiOCH Film (k=1.9) with High Water Resistance and High Thermal Stability Formed by Neutral-Beam-Enhanced-CVD

T. Sasaki¹、S. Yasuhara¹、T. Shimayama²、K. Tajima²、H. Yano²、S. Kadomura²、M. Yoshimaru²、N. Matsunaga²、S. Samukawa¹ (1.Tohoku Univ.(Japan)、2.STARC(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-1] The Helium Ion Microscope for Interconnect Material Imaging

W. Thompson¹、S. Ogawa²、L. Stern¹、L. Scipioni¹、J. Notte¹、L. Farkas¹、L. Barriss¹ (1.Carl Zeiss SMT(USA)、2.Selete(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-2] Relative Density Characterization of Patterned Low-k material by VEELS

Y. Otsuka¹、Y. Shimizu¹、N. Kawasaki¹、S. Ogawa² (1.Toray Res. Center, Inc.(Japan)、2.Selete(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-3] Evaluation of Dielectric Constant through Direct CMP of Porous Low-k Film

M. Kodera¹、T. Takahashi¹、G. Minamihaba¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-4] Prediction of Abnormal Etching Profile at High-Aspect-Ratio Via/ Hole Etching by using On-wafer Monitoring System

H. Ohtake¹、S. Fukuda¹、B. Jinnai¹、T. Tatsumi²、T. Samukawa¹ (1.Tohoku Univ.(Japan)、2.OKI Semiconductor Miyagi Co. Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-5] Integration and dielectric reliability of 30nm ½ pitch structures in Aurora ®LK HM

S. Demuynck¹、C. Huffman¹、M. Claes¹、S. Suhard¹、J. Versluijs¹、H. Volders¹、N. Heylen¹、K. Kellens¹、K. Croes¹、H. Struyf¹、G. Vereecke¹、P. Verdonck¹、D. De Roest²、J. Beynet²、H. Sprey²、G. P. Beyer¹ (1.IMEC(Belgium)、2.ASM Belgium(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-1L] A Compact Space and Efficient Drain Current Design for Multi-Pillar Vertical MOSFET's

K. Sakui¹、T. Endoh¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-2L] Exploration of Device Design Space to Meet Circuit Speed Targeting 22nm and Beyond

L. Wei¹、F. Boeuf²、D. Antoniadis³、T. Skotnicki²、H. S. Philip Wong¹ (1.Stanford Univ.(USA)、2.STMicroelectronics(France)、3.Massachusetts Inst. of Tech.(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-3L] Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices

S. Yamamoto¹、S. Sugahara¹ (1.Tokyo Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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