[G-3-1] Direct Measurement of Back-Tunneling Current during Program/Erase Operation of MONOS Memories and Its Dependence on Gate Work Function

J. Fujiki¹、S. Fujii¹、N. Yasuda¹、K. Muraoka¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-3-2] Thickness Effect on Read Window in a Two-Bit Nitrided-based Trapping Storage Cell

G. D. Lee¹、C. H. Cheng¹、S. H. Ku¹、C. H. Liu¹、S. H. Kuo¹、C. H. Lee¹、S. W. Huang¹、N. K. Zous¹、M. S. Chen¹、W. P. Lu¹、K. C. Chen¹、C. Y. Lu¹ (1.Macronix Int'l Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-3-3] Engineering of Si-rich Nitride Charge-Trapping Layer for Highly Reliable MONOS Type NAND Flash Memory with MLC Operation

R. Fujitsuka¹、K. Sekine¹、A. Sekihara¹、A. Fukumoto¹、J. Fujita¹、F. Aiso¹、Y. Ozawa¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-3-4] Thermally Robust Nanocrystal Memory with Co Bio-nanodot Self-assembled Monolayer as a Charge Trap Medium on Ultrathin LaAlO₃ Layer

S. Jung¹、K. Ohara²、Y. Uraoka²、T. Fuyuki²、I. Yamashita²、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech.(Republic of Korea)、2.NAIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami¹、K. Nishihara²、H. Ishida²、F. Aiso²、T. Iguchi²、D. Ichinose²、A. Fukumoto²、N. Aoki²、M. Kondo²、T. Izumida²、H. Tanimoto²、T. Enda²、T. Suzuki²、I. Mizushima²、F. Arai² (1.Toshiba R&D Center(Japan)、2.Toshiba Advanced Micro-electronics Center(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-4-2] The Operation Scheme and Process Optimization in TLC(Triple Level Cell) NAND Flash Characteristics

J. Yang¹、M. Park¹、S. Jung¹、S. Park¹、S. Cho¹、J. An¹、J. Lee¹、H. Lee¹、M. K. Cho¹、K. O. Ahn¹、K. Jin¹、Y. Koh¹ (1.Hynix Semiconductor Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-4-3] The Influence of Mechanical Stress on Data Retention in Advanced NAND Flash

S. W. Seo¹、H. Oh¹、Y. Yang¹、S. M. Yi¹、S. Y. Kim¹、P. Kim¹、D. K. Lee¹、H. Yang¹、H. Lee¹、M. K. Cho¹、K. O. Ahn¹、Y. Koh¹ (1.Hynix Semiconductor Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-4-4] A New Differential Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell

Y. H. Tsai¹、H. L. Yang¹、W. J. Lin¹、C. J. Lin¹、Y. C. King¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-1] Current Status and Future Challenge of PRAM

Y. H. Shih¹ (1.Macronix Int'l Co., Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-2] Elevated-Confined Phase Change RAM cells

H. K. Lee¹、L. P. Shi¹、R. Zhao¹、H. X. Yang¹、K. G. Lim¹、J. M. Li¹、T. C. Chong^1,2 (1.A*STAR(Singapore)、2.National Univ. of Singapore(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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