707件中(541 - 550)

[P-4-4] Precision Programming Power Control in Embedded P-channel SONOS Flash using Transient-IV Method

Y. J. Chen¹、Y. J. Ting¹、C. J. Liu¹、W. T. Sun¹、R. Shen¹ (1.eMemory Tech. Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-5] Low Power 0.13um Single Poly Embedded P-channel SONOS Flash using Band-to-Band Programming

K. Y. Hsiao¹、Y. J. Ting¹、C. J. Liu¹、W. T. Sun¹、R. Shen¹、C. Hsu¹ (1.eMemory Tech. Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-6] Source-Side Injection Programmed P-channel Self-Aligned-Nitride OTP Cell for 90nm Logic Nonvolatile Memory Applications

H. OuYang¹、Y. J. Chen¹、C. E. Huang¹、C. J. Lin¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-7] Optimized Silicon Nitride MONOS Memory for Superior Endurance of 10M Cycles

K. Yamabe¹、S. Yoshida¹、Y. Taniguchi¹、S. Kamohara¹ (1.Renesas Tech. Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-8] Programming Current Enhancement by Ge Incorporation into Tunnel Oxide Film

T. Ito¹、Y. Mitani¹、Y. Nakasaki¹、M. Koike¹、T. Konno¹、H. Matsuba¹、W. Kaneko¹、T. Kai¹、Y. Ozawa¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-9] Improved Switching Uniformity of a Carbon-based ReRAM device by Controlling Size of Conducting Filament

J. Park¹、H. Choi¹、M. Jo¹、J. Lee¹、T. W. Kim¹、J. Yoon¹、D. J. Seong¹、W. Lee¹、M. Chang¹、J. Shin¹、T. Lee¹、H. Hwang¹ (1.Gwangju Inst. Of Sci. and Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-10] Formation free resistive switching memory device using Ge_0.4Se_0.6 solid electrolyte

S. Z. Rahaman¹、S. Maikap¹、C. H. Lin²、T. Y. Wu²、Y. S. Chen²、P. J. Tzeng²、F. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.(Taiwan)、2.Industrial Tech. Res. Inst.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-11] Improved resistive switching of HfO_X/TiN stack with a reactive metal layer and annealing

P. S. Chen¹、H. Y. Lee^2,3、Y. S. Chen²、F. Chen²、M. J. Tsai² (1.Mingshin Univ. of Sci. and Tech.(Taiwan)、2.Industrial Tech. Res. Inst.(Taiwan)、3.National Tsing Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-12] A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate

G. Guegan¹、P. Touret¹、G. Molas¹、C. Raynaud¹、J. Pretet² (1.CEA - LETI/MINATEC(France)、2.STMicroelectronics(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-4-14] Ferroelectric P(VDF-TeFE) Gate FET Memory

T. Watanabe¹、H. Miyashita¹、T. Kanashima¹、M. Okuyama¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

707件中(541 - 550)