[P-13-3] Gate induced Cross-over between Fabry Perot and Quantum Dot Behavior in a Single-Walled Carbon Nanotube Hole-Transistor with Double Gate Structure

T. Kamimura^1,2,3、K. Matsumoto^1,3,4 (1.AIST(Japan)、2.JSPS (Japan)、3.CREST-JST(Japan)、4.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-4] Enhanced Visible Light and Electron Field Emission of Porous Silicon Nanowires

W. I. Hsu¹、S. J. Wang¹、W. C. Tsai¹、W. C. Hsu¹、F. S. Tsai¹、H. Y. Huang¹ (1.National Cheng Kung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-5] First Principles Study of Metals Coating on Single Wall Carbon Nanotube

Y. He¹、J. Zhang¹、Y. Wang¹、Z. Yu¹ (1.Tsinghua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-6] The Preparation of SiO₂ Nanotubes with Controllable inner/outer Diameter and Length using Hydrothermally Grown ZnO Nanowires

D. M. Kuo¹、S. J. Wang¹、K. M. Uang²、W. C. Tsai¹、W. I. Hsu¹、W. C. Lee¹、P. R. Wang¹、C. R. Tseng¹ (1.National Cheng Kung Univ.(Tainan)、2.WuFeng Inst. Of Tech.(Chia-yi))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-7] Diameter dependence of hole current in silicon and germanium nanowire FETs

H. Minari¹、N. Mori¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-8] Shape Effects on the Performance of Si and Ge Nanowire FETs based on Size De-pendent Bandstructure

C. S. Koong¹、G. Samudra¹、G. Liang¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-9] Experimental Investigation of Electron-Phonon Scattering Effect in Strained Si Nanowire FETs at Low Temperature

I. Tsuchida¹、A. Seike¹、H. Takai¹、J. Masuda²、D. Kosemura²、A. Ogura²、T. Watanabe¹、I. Ohdomari¹ (1.Waseda Univ.(Japan)、2.Meiji Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-10] Simulation on the Heat Transport in a Silicon Nano-Structure Covered with Oxide Films

T. Zushi¹、K. Kukita²、Y. Kamakura²、K. Taniguchi²、I. Ohdomari¹、T. Watanabe¹ (1.Waseda Univ.(Japan)、2.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-11] Interface and Passivation Effect on Subthreshold Transport of Carbon Nanotube Network Transistor by Plasma Enhanced Chemical Vapor Deposition

S. G. Jung¹、U. J. Kim²、Wanjun Park¹ (1.Hanyang Univ.(Korea)、2.Samsung Advanced Inst. Of Tech.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-12] Selectivity Lateral Grown ZnO Nanowire UV Photodetectors on Glass Substrate

W. Y. Weng¹、T. J. Hsueh²、S. J. Chang¹、C. L. Hsu³ (1.National Cheng Kung Univ(Taiwan)、2.National Nano Device Laboratories(Corp.)、3.National Univ of Tainan(Corp.))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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