707件中(251 - 260)

[G-8-3] Metal-Gate/High-Permittivity Dielectric Stack on Gallium Nitride formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

X. Liu¹、H. C. Chin¹、L. S. Tan¹、Y. C. Yeo¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-4] Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate

E. Kim¹、N. Soejima¹、Y. Watanabe¹、M. Ishiko¹、T. Kachi¹ (1.Toyota Central R&D Labs., Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-5] MIS Diode Characterization on n-GaN by C-V Measurement at 150 ℃

C. Y. Hu¹、H. Nokubo¹、M. Okada¹、J. P. Ao¹、Y. Ohno¹ (1.Univ. of Tokushima)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-6] Low Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

N. Yafune^1,3、M. Nagamori²、F. Watanabe²、K. Sakuno¹、M. Kuzuhara² (1.Sharp Corp.(Japan)、2.Univ. of Fukui(Japan)、3.JRCM(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-7] Electrochemical Oxidation of GaN for Surface Control of GaN-based Device Structures

N. Harada¹、N. Shiozaki¹、E. Ogawa¹、T. Hashizume¹ (1.Hokkaido Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-9-1] AFM Nanolithography of Graphene

L. Rokhinson¹、L. Weng¹、L. Zhang¹、Y. P. Chen¹ (1.Purdue Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-9-2] Graphene Channel Field-Effect Transistors with Schottky Tunneling Source and Drain

J. Zhu¹、J. C. S. Woo¹ (1.UCLA)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-9-3] Computational Study of Edge Roughness Effect on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes

S. B. Khalid¹、K. T. Lam¹、G. Liang¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-9-4] Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors

K. T. Lam¹、S. B. Kumar¹、S. K. Chin²、D. W. Seah¹、G. Liang^1,2 (1.National Univ. of Singapore(Singapore)、2.Inst. of High Performance Computing(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-9-5] Self-Excitation of Terahertz Plasma Oscillations in Optically Pumped Graphene

V. Ryzhii^1,3、M. Ryzhii^1,3、A. Satou^1,3、E. M. Amine²、T. Otsuji^2,3 (1.Univ. of Aizu(Japan)、2.Tohoku Univ.(Japan)、3.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

707件中(251 - 260)