[J-1-5] Evaluation of GaN MOSFET with TEOS SiO₂ Gate Insulator

K. Nakatani¹、J. P. Ao¹、K. Ohmuro¹、M. Sugimoto²、C. Y. Hu¹、Y. Sogawa¹、Y. Ohno¹ (1.Univ. of Tokushima(Japan)、2.Toyota Motor Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-6] Quasi-Normally-Off AlN/AlGaN/GaN MIS HEMTs Grown on 4 in. Silicon Substrate

S. Tan¹、S. Lawrence Selvaraj¹、T. Egawa¹ (1.Nagoya Inst. of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-7] Effective Heat Spreading with Separate Ohmic in AlGaN/GaN HEMTs

K. I. Lee¹、J. H. Park¹、H. J. Cho¹、J. C. Her¹、C. S. Yoo^1,3、H. Y. Cha²、K. S. Seo¹ (1.Seoul National Univ.(Korea)、2.Hongik Univ.(Korea)、3.Korea Electronic Tech. Inst.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-8] GaN Zero-Bias RF Mixer using a Lateral Field-Effect Rectifier

K. Y. Wong¹、W. J. Chen¹、K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-1] High-performance inversion-mode III-V MOSFETs enabled by atomic-layer-deposited high-k dielectrics

P. D. Ye¹ (1.Purdue Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-2] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N⁺-InGaAs Source Region

T. Kanazawa¹、H. Saito¹、K. Wakabayashi¹、T. Tajima¹、R. Terao¹、Y. Miyamoto¹、K. Furuya¹ (1.Tokyo Tech)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-3] Heteroepitaxy of Si_xGe_1-x (x < 5%) Source/Drain on GaAs Substrates

Z. Y. Han¹、G. L. Luo²、S. C. Huang²、C. H. Ko³、C. H. Wann³、H. Y. Lin³、C. T. Chung¹、C. C. Cheng¹、C. Y. Chang¹、C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.Taiwan Semiconductor Manufac. Co., Ltd.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-4] Performance Projection of III-V and Ge Channel MOSFETs

H. Tsuchiya¹、A. Maenaka¹、T. Mori¹、Y. Azuma¹ (1.Kobe Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-5] Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved MOS Characteristics

Y. Terada¹、M. Deura¹、Y. Shimogaki¹、Y. Nakano¹、M. Sugiyama¹ (1.Univ. of Tokyo)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-6] Investigation of Strained-Sb Hetrostructures with High Hole Mobility

A. Nainani¹、M. Kobayashi¹、D. Witte¹、T. Irisawa¹、T. Krishnamohan¹、K. Saraswat¹、B. R. Bennett²、M. G. Ancona²、J. B. Boos² (1.Stanford Univ.(USA)、2.Naval Res. Lab.(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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