[A-2-4] Statistical Analysis of Time Constant Ratio of Random Telegraph Signal with Very Large-Scale Array TEG

T. Fujisawa¹、K. Abe¹、S. Watabe¹、N. Miyamoto¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-5] Impact of Channel Doping Concentration on Random Telegraph Signal Noise

K. Abe¹、A. Teramoto¹、S. Watabe¹、T. Fujisawa¹、S. Sugawa¹、Y. Kamata²、K. Shibusawa²、T. Ohmi¹ (1.Tohoku Univ.(Japan)、2.OKI Semiconductor Miyagi Co., Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-6] Experimental Study on I_g RTS Noise of SiON/HfO₂/TaN PMOSFETs

L. Zhang¹、R. Wang¹、J. Zhuge¹、R. Huang¹、T. Yu¹、P. Kirsch²、H. H. Tseng²、Y. Wang¹ (1.Peking Univ.(China)、2.SEMATECH(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-7] Leakage and Matching Optimization of SRAM-cells for Wireless Applications

N. Planes¹、O. Menut¹、C. Laviron²、J. Bonnouvrier¹、F. Wacquant¹、R. Ranica¹、C. Boccaccio¹、O. Callen¹、S. Del-Medico¹、D. Noblet¹、M. Haond¹、F. Boeuf¹ (1.STMicroelectronics(France)、2.CEA-LETI(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing for Stress Technique in nMOSFETs

H. Itokawa¹、K. Miyano¹、Y. Oshima¹、I. Mizushima¹、K. Suguro¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae¹、H. Itokawa²、I. Mizushima²、S. Nakamura³、N. Uchitomi¹ (1.Nagaoka Univ. of Tech.(Japan)、2.Toshiba Corp.(Japan)、3.Aoyama Gakuin Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy

Q. Zhou¹、S. M. Koh¹、Z. Y. Zhao²、T. Toh²、H. Maynard²、N. Variam²、T. Henry²、Y. Erokhin²、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Varian Semiconductor(USA))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Contribution of Carbon to Activation and Diffusion of Boron in Silicon

H. Itokawa¹、Y. Agatsuma²、N. Aoki¹、N. Uchitomi²、I. Mizushima¹ (1.Toshiba Corp.(Japan)、2.Nagaoka Univ. of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-5L] Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique

M. Fukuda¹、Y. Shimamune¹、M. Nakamura¹、K. Tanahashi¹、T. Miyashita¹、M. Nishikawa¹、N. Tamura¹、T. Mori¹、Y. Nara¹、M. Kase¹ (1.Fujitsu Microelectronics Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope

D. Leonelli^1,2、A. Vandooren¹、R. Rooyackers¹、A. S. Verhulst^1,2、S. De Gendt^1,2、M. M. Heyns^1,2、G. Groeseneken^1,2 (1.IMEC(Belgium)、2.Katholieke Univ. Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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