[E-3-4L] Characteristic Sensitivity of Multi-Gate and Multi-Fin MOSFETs to Random Dopant Fluctuation and Implication for Digital Circuits

H. W. Cheng¹、C. H. Hwang¹、Y. Li^1,2 (1.National Chiao Tung Univ. (Taiwan)、2.National Nano Device Labs. (Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-1L] Monte Carlo Analysis of Optical Pulse Response of Plasmon-Resonant Terahertz Emitter

K. Kubota¹、E. Sano¹、Y. M. Meziani²、T. Otsuji² (1.Hokkaido Univ.(Japan)、2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-2L] Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃

D. Marcon^1,2、M. Van Hove¹、D. Visalli^1,2、J. Derluyn¹、J. Das¹、F. Medjdoub¹、S. Degroote¹、M. Leys¹、K. Cheng¹、R. Mertens^1,2、M. Germain¹、G. Borghs^1,2 (1.IMEC(Belgium)、2.Katholieke Universiteit Leuven(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-3L] High Voltage AlGaN/GaN HEMTs Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Y. H. Choi¹、S. J. Kim¹、Y. S. Kim¹、M. K. Kim¹、O. Seok¹、M. K. Han¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-4L] Substantial Reduction of Power Loss in a 14kVA SiC-Inverter

S. Nakata¹、S. Kinouchi¹、T. Kitamura¹、H. Sumitani¹、M. Imaizumi¹、T. Takami¹、T. Oi¹、T. Oomori¹ (1.Mitsubishi Electric Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-5L] SiC Power MOSFETs and Diodes for Next Generation Power Modules

J. W. Palmour¹、A. Agarwal¹、R. Callanan¹、J. Richmond¹ (1.Cree, Inc.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-1L] Defect-free Isolation on High-Thermal-Conductivity SOI Substrates for Complementary BiCMOS Technology

K. Van Wichelen¹、P. Ong¹、A. Moussa¹、D. Radisic¹、K. Devriendt¹、S. Halder¹、K. Kenis¹、W. Lee¹、B. Vandevelde¹、C. Soonekindt¹、S. A. Hadi¹、T. Smet¹、S. Van Huylenbroeck¹、S. Decoutere¹、M. Seacrist²、M. Ries²、V. Drobny³、R. Wise³ (1.IMEC(Belgium)、2.MEMC(US)、3.Texas Instruments(US))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-2L] Effect of drain bias stress on the stability of nanocrystalline silicon thin film transistor with various channel length

S. J. Kim¹、S. G. Park¹、S. B. Ji¹、M. K. Han¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-3L] Multilayer Epitaxial Lateral Overgrowth of Light Emitting Diode with Anisotropi-cally Etched GaN/sapphire Interface.

M. H. Lo¹、P. M. Tu¹、C. H. Wang¹、H. C. Kuo¹、S. C. Wang¹、H. W. Zan¹、C. Y. Chang¹、S. C. Hsu²、Y. J. Cheng²、S. C. Huang³ (1.National chiao Tung Univ.(Taiwan)、2.Res. Center for Applied Sci., Academia Sinica(Taiwan)、3.Advanced Optoelectronic Technology Inc.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-4L] InP Ring-shaped Quantum-dot Molecules Grown by Droplet Molecular Beam Epitaxy

W. Jevasuwan¹、P. Boonpeng¹、S. Panyakeow¹、S. Ratanathammaphan¹ (1.Chulalongkorn Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード