[K-1-1] From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs

J. Verduijn¹、G. P. Lansbergen¹、G. C. Tettamanzi¹、R. Rahman²、S. Biesemans²、N. Colleart³、G. Klimeck²、L. C. L. Hollenberg⁴、S. Rogge¹ (1.Delft Univ. of Tech.(Netherlands)、2.Purdue Univ.(USA)、3.IMEC(Belgium)、4.Univ. of Melbourne(Australia))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-2] Single-Electron Transport through Discrete Dopants

D. Moraru¹、M. Anwar¹、M. Ligowski^1,2、S. Miki¹、R. Nakamura¹、T. Mizuno¹、R. Jablonski²、M. Tabe¹ (1.Shizuoka Univ.(Japan)、2.Warsaw Univ. of Tech.(Russia))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-3] Tunnel Spectroscopy of Electron Subbands in Thin SOI MOSFETs

J. Noborisaka¹、K. Nishiguchi¹、H. Kageshima¹、Y. Ono¹、A. Fujiwara¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-4] Si SET-based Flexible Multi-valued Half Adder Logic Cell

S. J. Kim¹、E. S. Park¹、S. J. Shin¹、J. B. Choi¹、Y. S. Yu² (1.Chungbuk National Univ.(Korea)、2.Hankyong National Univ(Korea))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-5] Dual-Gate Single-Electron Transistors (DG-SETs) with Silicon Nano-Wire Channel and Surrounding Side Gates

D. S. Lee¹、K. C. Kang¹、J. E. Lee¹、H. S. Yang¹、J. H. Lee¹、B. G. Park¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-6] Dislocation-Based Si-Nanodevices

M. Reiche¹、M. Kittler²、D. Buca³、A. Hähnel¹、Q. T. Zhao³、S. Mantl³、U. Gösele¹ (1.Max-Planck-Institut für Mikrostrukturphysik(Germany)、2.IHP Frankfurt(Germany)、3.Forschungszentrum Jülich(Germany))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-7] Slow and Fast Electron Channels in a Coherent Quantum Dot Mixer

D. G. Austing^1,2、C. Payette^1,2、G. Yu¹、J. Gupta¹、G. Aers¹、S. Nair³、S. Amaha⁴、S. Tarucha^4,5 (1.National Res. Council(Canada)、2.McGill Univ.(Canada)、3.Univ. of Toronto(Canada)、4.JST(Japan)、5.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-8] Series Coupled Vertical Triple Quantum Dot Structures

S. Amaha¹、T. Hatano¹、K. Ono²、Y. Tokura^1,3、S. Tarucha^1,4、J. Gupta⁵、D. G. Austing⁵ (1.ICORP-JST(Japan)、2.RIKEN(Japan)、3.NTT Corp.(Japan)、4.Univ. of Tokyo(Japan)、5.National Res. Council of Canada(Canada))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi¹、Y. Sakurai²、Y. Takada²、Y. Shigeta⁴、M. Ikeda³、K. Makihara³、S. Miyazaki³、S. Nomura²、K. Shiraishi²、T. Endoh¹ (1.Tohoku Univ.(Japan)、2.Univ. of Tsukuba(Japan)、3.Hiroshima Univ.(Japan)、4.Univ. of Hyogo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-2] Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures

N. Morisawa¹、M. Ikeda¹、S. Nakanishi¹、A. Kawanami¹、K. Makihara¹、S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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