[G-1-3] Highly Scalable Capacitorless DRAM Cell on Thin-Body with Band-gap Engineered Source and Drain

P. Tang¹、D. Wu¹、L. Zhang¹、R. Huang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-4] Performance Improvement of the Capacitorless DRAM Cell with Quasi-SOI Structure Based on Bulk Substrate

D. Wu¹、R. Huang¹、P. Tang¹、Y. Zhang¹、Y. Wang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-5] Seed layer and multistack approaches to reduce leakage in SrTiO₃-based MIM capacitors using TiN bottom electrode

N. Menou¹、M. Popovici¹、K. Opsomer^1,2、B. Kaczer¹、M. A. Pawlak¹、A. Franquet¹、C. Detavernier²、S. Van Elshocht¹、D. J. Wouters¹、S. Biesemans¹、J. A. Kittl¹ (1.IMEC(Belgium)、2.Ghent Univ.(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-1] Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)

R. Degraeve¹、M. Cho¹、B. Govoreanu¹、B. Kaczer¹、M. B. Zahid¹、G. Van den bosch¹、J. Van Houdt¹、M. Jurczak¹、G. Groeseneken¹ (1.IMEC)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-2] Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices

E. Nowak¹、E. Vianello^1,2、L. Perniola¹、M. Bocquet¹、G. Molas¹、R. Kies¹、M. Gely¹、G. Ghibaudo³、B. D. Salvo¹、G. Reimbold¹、F. Boulanger¹ (1.CEA-LETI/MINATEC(France)、2.Univ. of Udine(Italy)、3.IMEP/INPG(France))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-3] Study of Transient Tunneling Current and Charge-Trapping Behaviors of SONOS-type Devices using Pulse-IV Technique

P. Y. Du^1,2、H. T. Lue¹、S. Y. Wang¹、T. Y. Huang²、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix Iint'l Co., Ltd.(Taiwan)、2.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-4] Roles of Traps Generated in Al₂O₃ Film with respect to Memory Characteristics in MANOS

K. Akiyama¹、T. Ozaki¹、H. Higashijima¹、Y. Tanaka¹、T. Shibata¹、Y. Akasaka¹、T. Kaitsuka¹ (1.Tokyo Electron Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-5] A New Method to Extract the Charge Centroid in the Program Operation of MONOS memories

S. Fujii¹、N. Yasuda¹、J. Fujiki¹、K. Muraoka¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-6L] SONOS-Type Nonvolatile Memory Formed on Epitaxial-Ge Layer on Si Substrate

J. R. Wu¹、M. L. Wu¹、L. L. Chen¹、Y. S. Lin¹、Y. H. Wu¹ (1.National Tsing Hua Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-7L] A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized V_TH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories

S. Noda¹、T. Hatanaka¹、M. Takahashi²、S. Sakai²、K. Takeuchi¹ (1.Univ. of Tokyo(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

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