[K-3-4] Robustness of Charge-qubit Cluster States to Double Quantum Point Contact Measurement

T. Tanamoto¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-5] Measurement of Electron Spin State in a Semiconductor Quantum well using Tomographic Kerr Rotation

T. Inagaki¹、H. Kosaka^1,2、Y. Rikitake^2,3、H. Imamura^2,4、Y. Mitsumori^1,2、K. Edamatsu¹ (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.Sendai National College of Tech.(Japan)、4.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-1] Electromechanical Systems for Memory and Logic Devices

I. Mahboob¹、H. Yamaguchi¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-2] Noise-enhanced Sensing using Micromechanical Nonlinear Resonator

Y. Yoshida¹、T. Ono¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-3] Carrier-induced Dynamic Backaction in GaAs Micromechanical Resonators

H. Okamoto¹、D. Ito^1,2、K. Onomitsu¹、H. Sanada¹、H. Gotoh¹、T. Sogawa¹、H. Yamaguchi^1,2 (1.NTT Basic Res. Labs.(Japan)、2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-4-4] A Novel Thin-film Transistor with Suspended Nanowire Channels and Side-gated Configuration

C. H. Kuo¹、H. C. Lin^1,2、G. J. Li¹、H. H. Hsu¹、C. J. Su¹、T. Y. Huang¹ (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-1] High hole current density in diamond MOSFETs fabricated on H-terminated Iia-type (111) diamond substrate

K. Tsuge¹、Y. Jingu¹、H. Umezawa²、H. Kawarada¹ (1.Waseda Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-2] Performance Comparisons of Ballistic Silicon-Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects

H. Ando¹、S. Sawamoto¹、T. Maegawa¹、T. Hara¹、H. Yao¹、H. Tsuchiya¹、M. Ogawa¹ (1.Kobe Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-3] Formation of Highly B-doped Source & Drain Layers with TiC Ohmic Contacts for H-terminated Diamond MOSFETs

T. Tsuno¹、Y. Jingu¹、H. Umezawa²、H. Kawarada¹ (1.Waseda Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-5-4] Cross-sectional Low-temperature Scanning Tunneling Spectroscopy of a p-n Junction and an Inversion Layer in InAs

K. Suzuki¹、K. Kanisawa¹、K. Onomitsu¹、K. Muraki¹ (1.NTT Basic Res.Labs.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

707件中(441 - 450)

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