[OP-01] Welcome Address

◯T. Kanayama¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 9:15 AM - 9:20 AM

[OP-02] Welcome Address

◯N. Yokoyama¹ (1.JSAP(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 9:20 AM - 9:25 AM

[OP-03] SSDM Award/ SSDM Paper Award Ceremony

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 9:25 AM - 9:45 AM

[PL-1-01] Future of Television: 8K Super Hi-Vision

◯T. Saito¹ (1.NHK Science & Technology Research Laboratories (Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 9:45 AM - 10:30 AM |PDF Download

[PL-2-01] Crossbar Arrays for Storage Class Memory and Non-von Neumann Computing

◯G. W. Burr¹ (1.IBM Almaden Research Center(United States of America))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 10:30 AM - 11:15 AM |PDF Download

[PL-2-02] Step Back for Going Beyond

◯A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 11:15 AM - 12:00 PM |PDF Download

[A-1-01(Invited)] Monolithic 3D (M3D) Complementary Metal-Oxide-Semiconductor (CMOS)-Nano-Electromechanical (NEM) Hybrid Circuits for Low-Power and High-Speed Reconfigurable Logic (RL) Applications

^○W. Y. Choi¹ (1.Sogang Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[A-1-02(Invited)] Stackable MoS₂ FinFETs Using Solid CVD Developed Through Fully CMOS-Compatible Process Technology

^○M. Chen¹, K. Li¹, L. Li², M. Li^2,3, Y. Chang⁴, C. Lin¹, Y. Chen¹, C. Chen¹, B. Wu¹, C. Wu¹, Y. Lee¹, J. Shieh¹, W. Yeh¹, P. Su⁵, T. Wang⁵, F. Yang³, C. Hu⁶ (1.National Nano Device Labs.(Taiwan), 2.King Abdullah Univ. of Sci. and Technology(Saudi Arabia), 3.Academia Sinica(Taiwan), 4.NCTU(Taiwan), 5.Dept. of Electronics Eng., NCTU(Taiwan), 6.Univ. of California, Berkeley(USA))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:30 PM |PDF Download

[A-1-03] A New Scale-Length Model for Short-Channel Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) Field-Effect Transistors

^○W. You¹, P. Su¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 2:50 PM |PDF Download

[A-1-04] Impacts of Device Design and Variability on 6T/8T SRAM Cells with MoS₂-n/WSe₂-p MOSFETs for 5.9nm node

^○C. Yu¹, P. Su¹, C. Chuang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:50 PM - 3:10 PM |PDF Download