Poster presentation

[11p-PA6-1~7] 15.7 Crystal characterization, impurities and crystal defects

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA6 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

△ [11p-PA6-1] First principles analysis on stability and diffusion barrier of metal atoms near the Si (001) surface

〇(M1)Noriyuki Nonoda¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

△ [11p-PA6-2] Influence of Carbon and Oxygen Impurities on the Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application

〇(M1)Daiki Tsuchiya¹, Koji Sueoka¹, Hidekazu Yamamoto² (1.OPU, 2.Chiba Tech.)

1:30 PM - 3:30 PM

[11p-PA6-3] Development of Estimation Method for Defects Density in Crystalline Si wafer by Kikuchi-pattern Analysis

〇Hiroaki Hanafusa¹, Takashi Oki¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

1:30 PM - 3:30 PM

[11p-PA6-4] Control Method of Lattice Defect Formed by Ion Irradiation Using Mask

〇Yuki Nakata¹, Takahide Yagi¹, Masatsugu Sogabe¹ (1.SHI-ATEX Co.,Ltd.)

1:30 PM - 3:30 PM

[11p-PA6-5] Observation of dislocations in PVT-grown AlN single crystal bulky substrate

〇Yongzhao Yao¹, Yoshihiro Sugawara¹, Yukari Ishikawa¹, Narihito Okada², Kazuyuki Tadatomo² (1.JFCC, 2.Yamaguchi Univ.)

1:30 PM - 3:30 PM

△ [11p-PA6-6] Dislocations in Tb₃Ga₅O₁₂ Single-Crystal by the Czochralski method

〇Miki Watanabe¹, Jisaburo Ushizawa¹, Takeshi Hayashi¹, Yutaka Anzai¹ (1.OXIDE)

1:30 PM - 3:30 PM

[11p-PA6-7] Control of Hydroxyapatite crystal orientation for the implant surface coating

〇Takafumi Kubota¹, Tomoya Oda¹, Mami Matsukawa¹ (1.Doshisha Univ.)

Oral presentation

[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

Tue. Mar 12, 2019 9:30 AM - 12:00 PM M111 (H111)

Takuo Sasaki(QST), RYOUTA SUEWAKA(SUMCO)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[12a-M111-1] Comments on the Voronkov model (5) Fluxes of point defects

〇Masashi Suezawa¹, Ichiro Yonenaga² (1.No affiliation, 2.Tohoku Univ)

9:45 AM - 10:00 AM

▲ [12a-M111-2] Numerical analysis of asymmetric three-phase line in the floating zone silicon

〇Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:00 AM - 10:15 AM

▲ [12a-M111-3] Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth

〇Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:15 AM - 10:30 AM

[12a-M111-4] Oxygen Transport Process in Silicon Melt under Inhomogeneous Magnetic Fields

〇Koichi Kakimoto¹, Liu Xin¹, Satoshi Nakano¹, Yoshiji Miyamura¹, Hirofumi Harada¹, Shin-ichi Nishizawa¹ (1.RIAM, Kyushu Univ.)

10:30 AM - 10:45 AM

[12a-M111-5] CO concentration in CZ furnace (III)

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Shinichi Nishizawa¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

11:00 AM - 11:15 AM

[12a-M111-6] Observation of dislocations around crystal necking parts of CZ-Silicon using super-Borrmann effect

〇(M1)Yu Fujita¹, Haruka Kamamoto¹, Hiroyuki Mizuochi¹, Tomoyuki Horikawa², Yoshiyuki Tsusaka^1,3, Junji Mastui³ (1.Univ. of Hyogo, 2.GlobalWafers Japan Co., Ltd., 3.Syn. Rad. Nano-Tech. Center)

11:15 AM - 11:30 AM

△ [12a-M111-7] 3D visualization of inclusions distribution in HP mc-Si ingot

〇(M1C)Soichiro Kamibeppu¹, Patricia Krenckel², Theresa Troetschler², Adam Hess², Stephan Riepe², Noritaka Usami¹ (1.Nagoya Univ., 2.Fraunhofer ISE)

11:30 AM - 11:45 AM

▲ [12a-M111-8] Cathodoluminescence study on InGaN/GaN multiple quantum shell

〇Wei Yi¹, Jun Chen¹, Jun Uzuhashi¹, Tetsuya Takeuchi², Satoshi Kamiyama², Tadakatsu Ohkubo¹, Takashi Sekiguchi^1,3 (1.NIMS, 2.Meijo Univ., 3.Tsukuba Univ.)

11:45 AM - 12:00 PM

▲ [12a-M111-9] Cathodoluminescence and 3D atom probe study of Mg implanted homoepitaxial GaN

〇JUN CHEN¹, Wei Yi¹, Jun Uzuhashi¹, Takashi Kimura¹, Shinya Takashima², Masahara Edo², Tadakatsu Ohkubo¹, Takashi Sekiguchi^1,3 (1.NIMS, 2.Fuji Electric, 3.Tsukuba Univ.)

Oral presentation

[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

Tue. Mar 12, 2019 1:30 PM - 5:00 PM M111 (H111)

Toshiaki Ono(SUMCO), Hiroaki Kariyazaki(GWJ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[12p-M111-1] First-principles analysis on interaction between metal atom and dopant complex in Si crystal

〇Hiroki Nagakura^1,2, Koji Sueoka² (1.Sony Semicconductor Manufacturing, 2.Okayama Prefectural Univ.)

1:45 PM - 2:00 PM

[12p-M111-2] Characteristic of Molecule Ion Implanted Epitaxial Wafers for CMOS image sensor (Ⅰ)
-Reaction kinetic analysis of hydrogen diffusion behavior-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

2:00 PM - 2:15 PM

△ [12p-M111-3] Characteristics of Molecular Ion Implanted Epitaxial Wafers for CMOS Image Sensor (II)
– Basic Characteristics of CH₄N Ion Implanted Epitaxial Silicon Wafer –

〇Akihiro Suzuki¹, Takeshi Kadono¹, Ryo Hirose¹, Ryosuke Okuyama¹, Ayumi Masada¹, Satoshi Shigematsu¹, Koji Kobayashi¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

2:15 PM - 2:30 PM

[12p-M111-4] First-principles analysis of defect formation in siliconcrystals for power device application

〇(M1)Daiki Tsuchiya¹, Koji Sueoka¹, Hidekazu Yamamoto² (1.OPU, 2.Chiba Tech.)

2:30 PM - 2:45 PM

[12p-M111-5] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers (3)

〇Susumu Maeda¹, Kozo Nakamura², Haruo Sudo¹, Koji Sueoka³ (1.Technology, GlobalWafers Japan Co., Ltd., 2.Regional Cooperative Research Org., Okayama Prefectural Univ., 3.Faculty of Computer Science and Systems Eng., Okayama Prefectural Univ.)

2:45 PM - 3:00 PM

[12p-M111-6] Control of oxygen precipitation in Si wafers by ultra-high temperature RTP

〇Haruo Sudo^1,2, Susumu Maeda¹, Kozo Nakamura³, Koji Sueoka⁴ (1.GlobalWafers Japan, 2.Graduate School of Computer Science and Systems Eng., Okayama Pref. Univ., 3.Regional Cooperative Research Org., Okayama Pref. Univ., 4.Faculty of Computer Science and Systems Eng., Okayama Pref. Univ.)

3:00 PM - 3:15 PM

[12p-M111-7] Analysis of Oxygen Precipitates by Highly-Parallel-X-ray Diffuse Scattering

〇Tomoyuki Horikawa¹, Hiroyuki Fujimori¹, Yoshiyuki Tsusaka², Junji Matsui³ (1.GlobalWafers Japan Co., Ltd., 2.Grad. Sch. of Material Sci. Univ. of Hyogo, 3.Syn. Rad. Nano-Tech. Center)

3:15 PM - 3:30 PM

△ [12p-M111-8] Error Factors in Carbon Quantitative Analysis in Si Using Room-Temperature Photoluminescence after Electron Irradiation

〇Yoichiro Ishikawa¹, Michio Tajima¹, Ryutaro Matsuoka¹, Atsushi Ogura¹ (1.Meiji Univ.)

3:45 PM - 4:00 PM

[12p-M111-9] Quality of silicon substrate and point defects (1) 4.5 Eras in 70 years

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:00 PM - 4:15 PM

[12p-M111-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(14) NO pairs, behavior and measurement

〇Naohisa Inoue^1,2, Shuichii Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[12p-M111-11] Measurement of carbon concentration in silicon crystal
(XVIII) Calibration between infrared absorption and SIMS

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

△ [12p-M111-12] 【Highlight】First observation of X-ray dynamical diffraction in protein crystals

〇Ryo Suzuki¹, Haruhiko Koizumi², Keiichi Hirano³, Takashi Kumasaka⁴, Kenichi Kojima⁵, Masaru Tachibana¹ (1.Yokohama City Univ., 2.Nagoya Univ., 3.KEK, 4.JASRI/SPring-8, 5.Yokohama Soei Univ.)

4:45 PM - 5:00 PM

[12p-M111-13] First-principles electronic-structure study of impurity-induced states in cubic BN and diamond

〇Hiroki Yamashita¹, Taishi Haga¹, Yoshitaka Fujimoto^1,2, Susumu Saito^1,2,3 (1.Tokyo Tech, 2.MCES, 3.Advanced Res. Ctr. Quantum Phys. Nanoscience)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-PA6-1~7] 15.7 Crystal characterization, impurities and crystal defects

△ [11p-PA6-1] First principles analysis on stability and diffusion barrier of metal atoms near the Si (001) surface

△ [11p-PA6-2] Influence of Carbon and Oxygen Impurities on the Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application

[11p-PA6-3] Development of Estimation Method for Defects Density in Crystalline Si wafer by Kikuchi-pattern Analysis

[11p-PA6-4] Control Method of Lattice Defect Formed by Ion Irradiation Using Mask

[11p-PA6-5] Observation of dislocations in PVT-grown AlN single crystal bulky substrate

△ [11p-PA6-6] Dislocations in Tb₃Ga₅O₁₂ Single-Crystal by the Czochralski method

[11p-PA6-7] Control of Hydroxyapatite crystal orientation for the implant surface coating

[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

[12a-M111-1] Comments on the Voronkov model (5) Fluxes of point defects

▲ [12a-M111-2] Numerical analysis of asymmetric three-phase line in the floating zone silicon

▲ [12a-M111-3] Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth

[12a-M111-4] Oxygen Transport Process in Silicon Melt under Inhomogeneous Magnetic Fields

[12a-M111-5] CO concentration in CZ furnace (III)

[12a-M111-6] Observation of dislocations around crystal necking parts of CZ-Silicon using super-Borrmann effect

△ [12a-M111-7] 3D visualization of inclusions distribution in HP mc-Si ingot

▲ [12a-M111-8] Cathodoluminescence study on InGaN/GaN multiple quantum shell

▲ [12a-M111-9] Cathodoluminescence and 3D atom probe study of Mg implanted homoepitaxial GaN

[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-1] First-principles analysis on interaction between metal atom and dopant complex in Si crystal

[12p-M111-2] Characteristic of Molecule Ion Implanted Epitaxial Wafers for CMOS image sensor (Ⅰ)
-Reaction kinetic analysis of hydrogen diffusion behavior-

△ [12p-M111-3] Characteristics of Molecular Ion Implanted Epitaxial Wafers for CMOS Image Sensor (II)
– Basic Characteristics of CH₄N Ion Implanted Epitaxial Silicon Wafer –

[12p-M111-4] First-principles analysis of defect formation in siliconcrystals for power device application

[12p-M111-5] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers (3)

[12p-M111-6] Control of oxygen precipitation in Si wafers by ultra-high temperature RTP

[12p-M111-7] Analysis of Oxygen Precipitates by Highly-Parallel-X-ray Diffuse Scattering

△ [12p-M111-8] Error Factors in Carbon Quantitative Analysis in Si Using Room-Temperature Photoluminescence after Electron Irradiation

[12p-M111-9] Quality of silicon substrate and point defects (1) 4.5 Eras in 70 years

[12p-M111-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(14) NO pairs, behavior and measurement

[12p-M111-11] Measurement of carbon concentration in silicon crystal
(XVIII) Calibration between infrared absorption and SIMS

△ [12p-M111-12] 【Highlight】First observation of X-ray dynamical diffraction in protein crystals

[12p-M111-13] First-principles electronic-structure study of impurity-induced states in cubic BN and diamond

Authentication

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-PA6-1~7] 15.7 Crystal characterization, impurities and crystal defects

△ [11p-PA6-1] First principles analysis on stability and diffusion barrier of metal atoms near the Si (001) surface

△ [11p-PA6-2] Influence of Carbon and Oxygen Impurities on the Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application

△ [11p-PA6-6] Dislocations in Tb3Ga5O12 Single-Crystal by the Czochralski method

[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

▲ [12a-M111-2] Numerical analysis of asymmetric three-phase line in the floating zone silicon

▲ [12a-M111-3] Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth

△ [12a-M111-7] 3D visualization of inclusions distribution in HP mc-Si ingot

▲ [12a-M111-8] Cathodoluminescence study on InGaN/GaN multiple quantum shell

▲ [12a-M111-9] Cathodoluminescence and 3D atom probe study of Mg implanted homoepitaxial GaN

[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

△ [12p-M111-3] Characteristics of Molecular Ion Implanted Epitaxial Wafers for CMOS Image Sensor (II)– Basic Characteristics of CH4N Ion Implanted Epitaxial Silicon Wafer –

△ [12p-M111-8] Error Factors in Carbon Quantitative Analysis in Si Using Room-Temperature Photoluminescence after Electron Irradiation

△ [12p-M111-12] 【Highlight】First observation of X-ray dynamical diffraction in protein crystals

Authentication

△ [11p-PA6-6] Dislocations in Tb₃Ga₅O₁₂ Single-Crystal by the Czochralski method

△ [12p-M111-3] Characteristics of Molecular Ion Implanted Epitaxial Wafers for CMOS Image Sensor (II)
– Basic Characteristics of CH₄N Ion Implanted Epitaxial Silicon Wafer –