[S-IIIB-12] The Breakdown Behavior of Short-Channel CMOS Devices Under High-Frequency Operations

Chung-Yu Wu, Sheng-Hsiung Chou, Hong-Jen Wu, Ing-Dar Liu (1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University, 2.United Mecroelectronics Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-13] Dynamic Analysis of Temperature Distribution in Integrated Circuit

Kazuhiro OKABE, Hisashi MATSUMOTO, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication Tohoku University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LB-2-1] The Fabrication of Josephson Junctions on Y-Ba-Cu-O Thin Films

Jiro Yoshida, Koichi Mizushima, Masayuki Sagoi, Yoshiaki Terashima, Tadao Miura (1.Research and Development Center, Toshiba Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LB-2-2] Formation of Stable Y-Ba-Cu-O Films on Si Substrates via Intermediate Al Layer

T. Asano, K. Tran, M. M. Rahman, T. Y. Yau, A. Byrne, C. Y. Yang, J. D. Reardon (1.Dept. of EECS, Santa Clara Univ., 2.Perkin-Elmer METCO)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LB-2-3] A High Speed 1-kbit Variable Threshold Josephson RAM Chip

Itaru KUROSAWA, Hiroshi NAKAGAWA, Shin KOSAKA, Masahiro AOYAGI, Susumu TAKADA (1.Electrotechnical Laboratory)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LA-6-1] Improvement of SiO2/Si Interface Properties by Fluorine Implantation

K. Ohyu, Y. Nishioka, Y. Ohji, N. Natsuaki (1.Central Research Laboratory, Hitachi, Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LA-6-2] Surface Reformed Thick Spin-on-glass for Planar Interconnection

S. Ito, Y. Homma, E. Sasaki, S. Uchimura, H. Morishima (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp., 3.Hitachi Chemical Co., Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LA-6-3] In situ Observation of Voiding in Aluminum Metallization by High Voltage Electron Microscopy

H. Okabayashi, A. Tanikawa, H. Mori, H. Fujita (1.Microelectronics Research Laboratories, NEC Corp., 2.Research Center for Ultra-High Voltage Electron Microscopy, Osaka University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LA-6-4] A Novel Device Structure for Latch-up Free VLSI CMOS Circuits

W. Pribyl, W. Reczek (1.Siemens AG., Components Group)

1988 International Conference on Solid State Devices and Materials |PDF Download

[LA-6-5] Performance Improvement in Fully Depleted Thin Film SOI MOSFETs

Y. Yamaguchi, H. Miyatake, S. Kusunoki, T. Nishimura, Y. Akasaka (1.LSI Research and Development Laboratory, 2.Mitsubishi Electric Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download