[P-1-28] Effects of CF3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes

Yoshinari Ichihashi, Yasushi Ishikawa, Ryu Shimizu, Hideki Mizuhara, Mitsuru Okigawa, Seiji Samukawa (1.Institute of Fluid Science, Tohoku University, 2.Sanyo Electric Co.,Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-29L] Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure

Akito Hara, Naoyoshi Tamura, Tomoji Nakamura (1.Fujitsu Lab. Ltd., 2.Tohoku-Gakuin University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-1-30L] Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara, K. Yamada (1.Advanced Electronic Materials Center, National Institute for Materials Science, 2.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 3.Graduate School of Advanced Sciences of Matter, Hiroshima Univ., 4.Semiconductor Leading Edge Technology Inc., 5.Leading edge Process Development Center, Tokyo Electron LTD., 6.Computational Materials Science Center, National Institute for Materials Science, 7.Nanotechnology Research Laboratories, Waseda University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-1] Formation of Mesoporous Pure Silica Zeolite Film

T. Seo, T. Yoshino, N. Hata, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST))

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-2] Pure-Silica Zeolite Films Prepared by a Vapor Phase Transport Method

Y. Cho, K. Kohmura, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Mitsui Chemicals, Inc. Catalyst Science Laboratory Heterogeneous Catalysis Group)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-3] Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

Keisuke Yamaoka, Hideaki Kato, Daisuke Tsukiyama, Yuji Yoshizako, Yoshikazu Terai, Yasufumi Fujiwara (1.Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-4] Comparison of the Planarization Technologies for the Next Generation

Itsuki Kobata, Yutaka Wada, Yasushi Toma, Tsukuru Suzuki, Akira Kodera, Katsuhiko Tokushige, Akira Fukunaga, Manabu Tsujimura (1.Precision Machinery Company, Ebara Corporation, 2.Ebara Research Co., Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-5] Application of Double Polishing Pad for Shallow Trench Isolation Chemical Mechanical Polishing Process

Yong-Jin Seo, Sung-Woo Park (1.Deptartment of Electrical and Electronics Engineering, Daebul University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-6] Analyses of Interface Adhesion between Cu and SiCN Etch Stop Layers by Nanoindentation and Nanoscratch Tests

Shou-Yi Chang, Yu-Shuien Lee (1.Department of Materials Engineering, National Chung Hsing University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-2-7] Characterization of pore sealing effect on trench sidewalls in porous low-k films by vapor adsorption in-situ spectroscopic ellipsometry

N. Hata, K. Koga, K. Sumiya, S. Takada, M. Tada, Y. Kawamoto, T. Kanayama (1.MIRAI- Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 2.Consortium for Advanced Semiconductor Materials and Related Technologies (CASMAT))

2006 International Conference on Solid State Devices and Materials |PDF Download