[A-9-2] Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation

H. Furukawa¹、S. Higashi¹、T. Okada¹、H. Murakami¹、S. Miyazaki¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-3] Carbon-Free Tantalum-Nitride Film from Ammonia and Extremely Diluted Pentakis-dimethylamino-Tantalum; Effect of Silicon Incorporation to nMIS-FET Metal-Gate

Y. Sugita¹、T. Aoyama¹、Y. Nara¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-4] Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor

H. Kondo¹、S. Sakurai¹、A. Sakai²、M. Ogawa¹、S. Zaima¹ (1.Nagoya Univ.、2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-5] Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing

D. Ishikawa¹、S. Kamiyama¹、E. Kurosawa¹、T. Aoyama¹、Y. Nara¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] III-V CMOS: Challenges and Opportunities (Invited)

J. A. del Alamo¹、D. H. Kim¹、N. Waldron¹ (1.MIT, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Enhancement-Mode In_0.53Ga_0.47As n-MOSFET with Self-aligned Gate-first Process and CVD HfAlO Gate Dielectric

J. Lin¹、S. J. Lee¹、H. J. Oh¹、G. K. Dalapati²、D. Z. Chi²、G. Q. Lo³、D. L. Kwong³ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate

K. Ikeda¹、Y. Yamashita¹、M. Harada¹、T. Yamamoto¹、S. Nakaharai¹、N. Hirashita¹、Y. Moriyama¹、T. Tezuka¹、N. Taoka²、I. Watanabe³、N. Hirose³、N. Sugiyama¹、S. Takagi^2,4 (1.MIRAI-ASET、2.MIRAI-ASRC、3.NICT、4.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs

K. Morii¹、S. Dissanayake¹、S. Tanabe¹、R. Nakane¹、M. Takenaka¹、S. Sugahara²、S. Takagi¹ (1.Univ. of Tokyo、2.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-5] Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay¹、R. Clerc¹、G. Pananakakis¹、G. Ghibaudo¹ (1.IMEP, France)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-1] Recent Progress in Carbon Nanotube Electronics - Modeling, Materials, Devices, Circuits, and Interconnects (Invited)

H. S. P. Wong¹ (1.Stanford Univ., USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード