[H-6-4] Tolerance of Photon Entanglement in a Droplet Epitaxial Quantum Dot Grown on (111)A Surface

^○H. Nakajima¹, X. Liu², N. Ha², R. Takemoto¹, H. Kurosawa¹, T. Mano², T. Kuroda², K. Sakoda², I. Suemune¹, H. Kumano¹ (1.RIES Hokkaido Univ., 2.NIMS(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 10:00 AM - 10:15 AM |PDF Download

[H-7-1] Determination of Phonon Decay-rate in p-type Si under Fano Resonance by Measurements of Coherent Phonons with Femto-second Laser Pulses

^○K. Kato¹, K. Oguri¹, H. Sanada¹, T. Tawara¹, T. Sogawa¹, H. Gotoh¹ (1.NTT BRL(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 10:45 AM - 11:00 AM |PDF Download

[H-7-2] Dynamic creation of a topologically-ordered Hamiltonian using spin-pulse control in the Heisenberg model

^○T. Tanamoto¹, K. Ono², Y. X. Liu^2,3, F. Nori^2,4 (1.Toshiba Corp., 2.Riken, 3.Tsinghua Univ., 4.Univ. of Michigan(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:00 AM - 11:15 AM |PDF Download

[H-7-3L] Withdrawn

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:15 AM - 11:30 AM

[H-7-4] Controlled Photon Emission of Colloidal PbS Quantum Dot by Using Photonic Dot Made of Optical Polymer and Silicon

^○T. Nozaka¹, K. Mukai¹ (1.Yokohama National Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:30 AM - 11:45 AM |PDF Download

[H-7-5L] Characterization and Topological Properties of Bi2Se3 Thin Film Grown by using Physical Vapor Deposition

Y. C. Lin¹, Y. S. Chen¹, C. C. Lee¹, J. K. Wu¹, H. Y. Lee¹, ^○Y. H. Chang¹ (1.National Taiwan Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:45 AM - 12:00 PM |PDF Download

[H-7-6] (Invited) Ultraclean Carbon Nanotube Quantum Dots Coupled to Superconducting Impedance Matching Circuits

^○M. Jung¹, T. Hasler¹, V. Ranjan¹, G. Puebla Hellmann^1,2, A. Wallraff², C. Schonenberger¹ (1.Univ. of Basel, 2.ETH Zurich(Switzerland))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 12:00 PM - 12:30 PM |PDF Download

[J-1-1] Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

^○T. Kojima^1,2, S. Harada^1,3, Y. Kobayashi^1,2, M. Sometani^1,2, K. Ariyoshi^1,4, J. Senzaki^1,3, M. Takei^1,2, Y. Tanaka^1,3, H. Okumura^1,3 (1.R&D Partnership for Future Power Electronics Technology, 2.Fuji Electric Co., Ltd, 3.AIST, 4.Toshiba Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:15 PM |PDF Download

[J-1-2] Characterization of Process-Induced Defects in SiC MOSFETs by Cross-Sectional Cathodoluminescence

^○R. Sugie¹, T. Uchida¹, K. Kosaka¹, K. Matsumura¹ (1.Toray Research Center Inc.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:15 PM - 2:30 PM |PDF Download

[J-1-3] Effects of High-Temperature Diluted-H₂ Annealing on Effective Mobility of 4H-SiC MOSFETs with Thermally-Grown SiO₂

^○H. Hirai¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:45 PM |PDF Download