[PS-4-4] High-performance In-Ga-Zn-O TFT Memory with Pt Nanocrystals

^○S. B. Qian¹, W. P. Zhang¹, W. J. Liu¹, S. J. Ding¹ (1.Fudan Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-5] Resistance Switching Memory Operation of CaF₂/Si/CaF₂ Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

^○K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Tech(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-6] [No-show]Switching Kinetics of VCM-based Memristor: Evolution and Positioning of Nanofilament

^○J. Y. Chen¹, C. W. Huang¹, C. H. Chiu¹, Y. T. Huang¹, W. W. Wu¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials

[PS-4-7] Impact of Film Morphology on the Switching Characteristics of Ta₂O₅-Based Atomic Switches

^○C. Mannequin¹, T. Tsuruoka¹, T. Hasegawa², M. Aono¹ (1.National Inst. for Material Sci., 2.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-8] Guideline Model for the Bias-Scheme-Dependent Power Consumption of a ReRAM Crossbar Array

^○W. K. Sun¹, H. Lim¹, S. J. Choi¹, H. S. Shin¹ (1.Ewha Womans Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-9] Properties of SiC Resistive Memory for Harsh Environments

^○K. Morgan¹, J. Fan¹, R. Huang¹, L. Zhong¹, R. Gowers¹, L. Jiang¹, K. De Groot¹ (1.Univ. of Southampton(UK))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-10] Understanding of the Abnormal Unipolar Resistance Switching Behavior in CBRAM

^○H. T. Sun¹, Q. Liu¹, D. L. Xun¹, K. K. Zhang¹, H. B. Lv¹, W. Banerjee¹, S. B. Long¹, M. Liu¹ (1.Institute of Microelectronics Chinese Academy of Sciences(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-11] SONNOS Nonvolatile Memory Based on Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistor with Excellent Retention

^○Y. R. Lin¹, W. C. Wang¹, Y. H. Lin², Y. C. Wu¹ (1.National Tsing Hua Univ., 2.National United Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-12L] Concept of a SOT-MRAM Based on 1Transistor-1MTJ-Cell Structure

^○A. Makarov¹, T. Windbacher¹, V. Sverdlov¹, S. Selberherr¹ (1.TU Wien(Austria))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-13L] Theoretical Study of SET Operation in Nantero Memory Cell

^○M. Stopa^1,2, T. Rueckes¹ (1.MIT, 2.Nantero Inc.(USA))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード