[G-3-3] Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands

Toshiyuki Miyazawa, Jun Tatebayashi, Toshihiro Nakaoka, Motomu Takatsu, Satomi Ishida, Satoshi Iwamoto, Kazuya Takemoto, Shinichi Hirose, Tatsuya Usuki, Naoki Yokoyama, Yasuhiko Arakawa (1.Institute of Industrial Science, The University of Tokyo, 2.Fujitsu Laboratories Ltd., 3.Nanoelectronics Collaborative Research Center, The University of Tokyo, 4.Research Center for Advanced Science and Technology, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-3-4] Real-time observation of charge state transitions in a double quantum dot

T. Hayashi, T. Fujisawa, R. Tomita, Y. Hirayama (1.NTT Basic Research Laboratories, 3-1, NTT Corporation, 2.Tokyo Institute of Technology, 3.SORST-JST)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-1] Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker

Kenji Tsubaki, Takuya Komoda, Nobuyoshi Koshida (1.Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd., 2.Graduate School of Eng., Tokyo Univ. of A&T)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-2] Superconducting Proximity Effect on Piezoresistance in a Superconductor-Semiconductor Junction

Hajime Okamoto, Tatsushi Akazaki, Mineo Ueki, Hiroshi Yamaguchi (1.NTT Basic Research Laboratories, NTT Corporation, 2.NTT Electronics Techno Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-3] Room Temperature Electroluminescence of CdF2/CaF2 Inter-subband Transition Laser Structures grown on Si Substrate

Keisuke Jinen, Takeshi Kikuchi, Masahiro Watanabe, Masahiro Asada (1.Dept. of Electronics and Applied Physics, Tokyo Inst. of Tech., 2.SORST, 3.CREST - Japan Science and Technology Agency)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-4] Electroluminescence of Oxygen Deficient YAlO3 Crystals

Masanori Ando, Toru Sakaguchi, Akio Yamanaka, Yutaka Kawabe, Eiichi Hanamura (1.Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Kansai Center, and CREST, Japan Science and Technology Agency (JST), 2.Faculty of Photonics Science and Technology, Chitose Institute of Science and Technology, and CREST, Japan Science and Technology Agency (JST))

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-5] Resonant terahertz photomixing in integrated HEMT-QWIP device

Victor Ryzhii, Maxim Ryzhii, Irina Khmyrova, Taiichi Otsuji, Michael S. Shur (1.Comp, Solid State Physics Lab, Univ. of Aizu, 2.Research Inst. Electron Communication, Tohoku University, 3.Dept. of ECS Eng., Rensselaer Polytechnic Inst.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-4-6L] Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH)

Kensuke Murashima, Yasuhisa Omura (1.Graduate School of Eng, Kansai University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-5-1] Fabrication of Defect-Free Sub-10 nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process

Tomohiro Kubota, Jem-Kun Chen, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Satoshi Yamasaki, Seiji Samukawa (1.Institute of Fluid Science, Tohoku University, 2.Graduate School of Materials Science, Nara Institute of Science and Technology, 3.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 4.Diamond Research Center, National Institute of Advanced Industrial Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[G-5-2] Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch

N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, M. Aono (1.Fundamental and Environmental Research Labs., NEC Corp., 2.ICORP, Japan Science and Technology Agency (JST), 3.Nanomaterials Laboratory)

2005 International Conference on Solid State Devices and Materials |PDF Download