[E-4-1] Novel Laser Diode Structure consisting of a Si Waveguide and Compound-Semiconductor MQW layers for Si Platform Integration

Satoshi Kodama, Hyundai Park, Alexander Fang, John E. Bowers (1.University of California Santa Barbara, ECE Department Santa Barbara, 2.NTT Photonics Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate

Toshihiro Matsuda, Takashi Ibe, Kiyoshi Nishihara, Hideyuki Iwata, Satoshi Iwatsubo, Takashi Ohzone (1.Department of Electronics and Informatics, Toyama Prefectural University, 2.Central Research Institute, Toyama Industrial Technology Center, 3.Department of Communication Engineering, Okayama Prefectural University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] Investigation of β-FeSi2/Si Heterostructures by Photoluminescence with Different Optical Configurations

Yoshikazu Terai, Yoshihito Maeda, Kensuke Akiyama, Yasufumi Fujiwara (1.Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2.Department of Energy Science and Technology, Kyoto University, 3.Kanagawa Industrial Technology Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence if fabrication process on lower layer MOS capacitors

Tetsuo Tabei, Kazuhiko Maeda, Shin Yokoyama, Hideo Sunami (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Central Glass Co., LTD)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-4-5] Multi-Chip Shared-Memory Module with Optical Interconnection for Parallel Processor System

Hirofumi Kuribara, Hiroyuki Hashimoto, Takafumi Fukushima, Mitsumasa Koyanagi (1.Dept. of Bioengineering and Robotics, Graduate School of Eng., Tohoku Univ.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-4-6] A 51,272-gate-count Dynamic Optically Reconfigurable Gate Array in a standard 0.35 μm CMOS Technology

Minoru Watanabe, Fuminori Kobayashi (1.Department of Systems Innovation and Informatics Kyushu Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1] Active Pixel Sensor Using a PMOSFET-Type Photodetector with a Transfer Gate for Variable Photosensitivity

Sang-Ho Seo, Sung-Ho Lee, Mi-Young Do, Jang-Kyoo Shin, Pyung Choi (1.Department of Electronics, Kyungpook National University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-5-2] Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel

Jongwan Jung, Jeong-Ho Lyu, Hwangyoon Klm, HyunWoo Lee, Je-Hyuck Song, Youngsub You, Hyunpil Noh, Duck-hyung Lee, Kinam Klm (1.Technology Development Team, Memory Division, 2.Process Technology group, Memory Dlvlslon, Semiconductor Business, Samsung Electronlcs Co, Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3] Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Utilizing an Undoped Photo-Absorption Layer

Dong-Hwan Jun, Jae-Hyung Jang, Ilesanmi Adesida, Jong-In Song (1.Dept. of Information and Communications, GIST, 2.Micro and Nanotechnology Laboratory, University of Illinois)

2005 International Conference on Solid State Devices and Materials |PDF Download

[E-5-4] A Bias-Dependent Equivalent-Circuit Model of High Performance Evanescently Coupled Photodiode with Partially P-Doped Absorption Layer

Y.-S. Wu, D.-M. Lin, F.-H. Huang, W. Y. Chiu, J.-W. Shi, Y.-J. Chan (1.Department of Electrical Engineering, National Central University)

2005 International Conference on Solid State Devices and Materials |PDF Download