[H-7-2] Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer

J.E. Heo, B.J. Bae, D.C. Yoo, S.D. Nam, J.E. Lim, D.H. Im, S.O. Park, H.S. Kim, U.I. Chung, J.T. Moon (1.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-7-3] Bit Distribution and Reliability of High Density 1.5V FRAM Embedded with 130nm, 5LM Copper CMOS Logic

K.R. Udayakumar, K. Boku, K.A. Remack, J. Rodriguez, S.R. Summerfelt, F.G. Celii, S. Aggarwal, J.S. Martin, L. Hall, L. Matz, B. Rathsack, H. McAdams, T.S. Moise (1.Texas Instruments Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-8-1] Fabrication and Characterization of Ferroelectric Gate Field Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction

Bong-Yeon Lee, Ikemori Shin-ichi, Minoru Noda, Masanori Okuyama (1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-8-2] Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formaton by Controlling Properties of High Frequency and Microwave Excited Plasma

Ichirou Takahashi, Hiroyuki Sakurai, Tatsunori Isogai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-8-3] Bismuth ferrite Thin Films for Advanced FeRAM Devices

S. K. Singh, H. Ishiwara (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-8-4] Multi-bit Programming for 1T-FeRAM by Local Polarization Method

Yoshiaki Tabuchi, Satoshi Hasegawa, Tetsuro Tamura, Hiromasa Hoko, Kazumi Kato, Yoshihiro Arimoto, Hiroshi Ishikawa (1.Tokyo Intitute of Technolory, Interdisciplinary Graduate School of Science and Engineering, 2.Silicon Technology Lab., FUJITSU LABORATORIES LTD., 3.National Institute of Advanced Industrial Science and Technology, 4.System LSI Development Labs., FUJITSU LABORATORIES LTD.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-9-1] Overview and Future Challenges of MRAM Technologies

S. Tehrani, B.N. Engel, J.M. Slaughter, M. Durlam, N. Rizzo, R. Dave, J. Sun, J. Janesky, S. Pietambaram, F. Mancoff (1.Freescale Semiconductor, Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-9-2] A Novel MTJ Shape with Large Write Operation Margin for High Density MRAM

Y. Sato, S. Yagaki, C. Yoshida, K. Kobayashi, M. Aoki, H. Tanaka (1.FUJITSU LAB. LTD.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-9-3] Self-aligned MTJ etching technique using side walls for high-density 8F2 MRAMs

M. Yoshikawa, M. Amano, T. Ueda, E. Kiatagawa, S. Takahashi, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, T. Kajiyama, K. Hosotani, Y. Asao, K. Suemitsu, H. Hada, S. Tahara, H. Yoda (1.Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation, 3.System Devices Research Laboratories, NEC Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-9-4] New Magnetic Flash Memory with FePt Magnetic Floating Gate

Cheng-Kuan Yin, Ji-Chel Bea, Youn-Gi Hong, Masanobu Miyao, Kenji Natori, Mitsumasa Koyanagi (1.Dept. Bioengineering and Robotics, Tohoku University, 2.Japan Science and Technology Agency (JST), 3.Dept. Electronics, Kyushu University, 4.Dept. Institute of Applied Physics, Tsukuba University)

2005 International Conference on Solid State Devices and Materials |PDF Download