[H-2-2] Study of Temperature Effect on Low VT State Behavior of NBit Cells

Evelyn Chen, K. F. Chen, Ijen Huang, N. K. Zous, Lenvis Liu, Y. J. Chen, Sam Chen, M. S. Chen, L. T. Ho, W. P. Lu, Wenchi Ting, Joseph Ku, Andy Weng, H. C. Liou, Chih-Yuan Lu (1.Technology Development Center, Macronix International Co., Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-2-3] NeoFlash -True Logic Based 0.18μm Single Poly Embedded SONOS Flash

H. M. Lee, L. Lim, S. M. Jung, S. T. Woo, H. M. Chen, C. Y. Lin, R. Shen, C. D. Wang, C. C.-H. Hsu, S. C. Sun (1.Chartered Semiconductor Manufacturing Ltd., 2.eMemory Technology Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-2-4] Program Boosting with Local Short-Channel-Effect (LSCE) Unique to Charge Trapping Memory Using Hot-Carrier-Injection

T. Kobayashi, H. Tomiye, O. Oka, H. Futai, S. Hara, I. Fujiwara, K. Koyama, T. Oda (1.Semiconductor Technolory Development Group, Semiconductor Solutions Network Company, Sony Corporation, 2.Sony Semiconductor Kyushu Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-2-5] Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory

Jang-Sik Lee, Chang-Seok Kang, Yoo-Cheol Shin, Chang-Hyun Lee, Ki-Tae Park, Jong-Sun Sel, Viena Kim, Byeong-In Choe, Jae-Sung Sim, Jungdal Choi, Kinam Kim (1.Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-3-1] High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S3 (Stacked Single-crystal Silicon) Technology and KrF lithography

Kunho Kwak, Wonseok Cho, Jonghyuk Kim, Jaejoo Shim, Hoon Lim, Jaehoon Jeong, Changmin Hong, Jinho Kim, Hoosung Cho, Bonghyun Choi, Jooyoung Kim, Sunghyun Kwon, Soon-moon Jung, Kinam Kim (1.Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-3-2] Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure

C.-S. Kim, Y. J. Noh, J. H. Kim, B. Y. Koo, J. H. Heo, D.-C. Kim, Y. G. Shin, U-In Chung, J. T. Moon (1.Memory Division, Samsung Electronics Co., Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-3-3] Technology Trend of Soft Errors based on Accurate Estimation Method

Y. Tosaka, R. Takasu, H. Ehara, T. Uemura, H. Oka, S. Satoh, N. Matsuoka, K. Hatanaka (1.Fujitsu Laboratories Ltd., 2.Fujitsu Ltd., 3.Reserch Center for Nuclear Physics, 4.Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-4-1] Feasibility analysis of direct tunneling through medium-κ dielectrics for embedded RAM applications

B. Govoreanu, R. Degraeve, T. Kauerauf, W. Magnus, D. Wellekens, G. Groeseneken, J. Van Houdt (1.IMEC, 2.Katholieke Universiteit Leuven, ESAT Dept.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-4-2] Impact of Vth interference suppression using a novel Poly Si shield on FLASH memories.

T. Fukumura, S. Shimizu, Y. Ikeda, M. Shimizu, M. Fujinaga, K. Ishikawa F. Ohta, A. Fukasawa, T. Yoshitake, K. Hirao, O. Tsuchiya, Y. Ohji (1.Renesas Technology Corp.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[H-4-3] Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile

Wook Hyun Kwon, Jung In Han, Bomsoo Kim, Chang-Ki Baek, Sang-Pil Sim, Wook H. Lee, Jee Hoon Han, Cheol Jung, Heon Kyu Lee, Young Kwan Jang, Jeung Hwan Park, Dae Mann Kim, Chan-Kwang Park, Kinam Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.)

2005 International Conference on Solid State Devices and Materials |PDF Download