Au Gate Metallization

J.H. Jang, S. Kim, I. Adesida (1.Department of Information and Communications Gwangju Institute of Science and Technology, 2.Micro and Nanotechnology Laboratory University of Illinois at Urbana Champaign)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-12] HEMT Yield Improvement with Ultrasonic-assisted recess for High speed Integrated Circuit

Seong-Jin Yeon, Hyungtae kim, Jongwon Lee, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-13] Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)

Po-Hsien Lai, Ssu-I Fu, Yan-Ying Tsai, Chih-Hung Yen, Chung-I Kao, Chun-Wei Chen, Wen-Chau Liu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-14L] Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages

Li-Hsin Chang, Kun-Ming Chen, Guo-Wei Huang, Hua-Chou Tseng, Victor Liang (1.National Nano Device Laboratories, 2.United Microelectronics Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-1] Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate

Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang, Tron-Min Chen, Bor-Wen Liou (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 2.Dept. of Electrical Eng., Wu-Feng Institute of Technology, 3.Dept. of Computer Science and Information Eng., Wu-Feng Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-2] Fabrication and characteristics of GaN-based Microcavity LEDs with high reflectivity AlN/GaN DBRs

Y. C. Peng, C. C. Kao, J. Y. Tsai, T. C. Lu, H. H. Yao, T. T. Kao, C. F. Lin, H. C. Kuo, S. C. Wang (1.Institute of Electro-Optical Engineering, National Chiao Tung University, 2.Department of Materials Engineering, National Chung Hsing University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-3] GaN-Based Green Resonant Cavity Light Emitting Diodes

W. K. Wang, R. H. Horng, S. Y. Huang, J. M. Chen, Y. J. Tsai, D. S. Wuu (1.Department of Material Engineering, National Chung Hsing University, 2.Institute of Precision Engineering, National Chung Hsing University, 3.Department of Electrical Engineering, Da-Yeh University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-4] Light-output Enhanced of GaN-based Light-emitting Diodes by Photoelectrochemical oxidation in H2O

Fang-I Lai, W. Y. Chen, C. C. Kao, H. C. Kuo, S. C. Wang (1.Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-5] High Brightness InGaN/GaN LEDs with ESD Protection

Shih-Chang Shei, Chia-Sheng Chang, Shoou-Jinn Chang, Yan-Kuin Su (1.South Epitaxy Corporation, 2.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P7-6] Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface

Hung-Wen Huang, Jung-Tang Chu, Chih-Chiang Kao, Tao-Hung Hsueh, Hao-Chung Kuo, Shing-Chung Wang (1.Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 2.TrueLight Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download