[P6-1] Extremely Low Noise Characteristics of 0.15 μm Power Metamorphic HEMT

Jae Yeob Shim, Hyung Sup Yoon, Dong Min Kang, Ju Yeon Hong, Kyung Ho Lee (1.InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-2] In0.49GaP/Al0.45GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity

Kyoungchul Jang, Juyong Lee, Jaehak Lee, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-3] Origin of Frequency Dependence in Drain Conductance of InAIAs/InGaAs HEMTs

Hirohisa Taguchi, Maki Hayakawa, Yuki Nakamura, Tsutomu Iida, Yoshifumi Takanashi (1.Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo University of Science)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-4] Improvement of Linearity in Novel InGaAsN-based HEMTs

Yan-Kuin Su, Shuo-Hsien Hsu, Shoou-Jinn Chang, Jynn-De Wu (1.National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-5] Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor

Ching-Sung Lee, Wei-Chou Hsu, Yeong-Jia Chen, Jun-Chin Huang, Dung-Hai Huang (1.Department of Electronic Engineering, Feng Chia University, 2.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-6] A Comparative Study on the DC, Microwave Characteristics of 0.12 μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process

Jong-Won Lim, Ho-Kyun Ahn, Hong-Gu Ji, Woo-Jin Chang, Jae-Kyoung Mun, Haecheon Kim (1.High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-7] Novel In0.425Al0.575As/InxGa1-xAs Metamorphic δ-HEMT’s on GaAs Substrate with Various Channel Designs

Wei-Chou Hsu, Ching-Sung Lee, Yeong-Jia Chen, Jun-Chin Huang, Chang-Luen Wu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Department of Electronic Engineering, Feng Chia University, 3.Transcom, Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-8] Compact RF Switches Using Dielectric Overhang Gate Process & Stacked Inductor

Kyoungchul Jang, Juyoung Lee, Sungwon Kim, Kwangseok Seo (1.Seoul National University, School Of Electrical Engineering & Computer Science)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-9] P-type doping for Be/C co-implantation in GaN

K. T. Liu, Y. K. Su, S. J. Chang, Y. Horikoshi (1.Department of Electronic Engineering, Cheng Shiu University, 2.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 3.School of Science and Engineering, Waseda University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P6-10] Enhanced fmax and low base resistance in Ni silicided SiGe HBT

Hyun-Cheol Bae, Sang-Hoon Kim, Young-Joo Song, Seong-Wook Yoo, Sang-Heung Lee, Bo-Woo Kim (1.SiGe Device Team, High Speed IC Research Department Electronics and Telecommunications Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF Download

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